...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Crystal growth & design >Uptake Mechanism of Atmospheric Hydrogen Chloride Gas in Ice Crystals via Hydrochloric Acid Droplets
【24h】

Uptake Mechanism of Atmospheric Hydrogen Chloride Gas in Ice Crystals via Hydrochloric Acid Droplets

机译：盐酸液滴冰晶大气氯化氢气体的摄取机理

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Surfaces of ice have attracted considerable attention as "reaction sites" where atmospheric gases cause various chemical reactions in nature. Hence, revealing the uptake mechanism of atmospheric gases on/in ice remains an experimental challenge. Here we show the direct observation of ice crystal surfaces by advanced optical microscopy in the presence of hydrogen chloride (HCl) gas, which triggers a series of chemical reactions that cause ozone depletion. We found that the HCl gas induced the appearance of droplets of HCl solution on ice crystal surfaces. Under supersaturated water vapor pressure, the HCl droplets were quickly embedded in the ice crystals during the growth of the ice. In contrast, under undersaturated conditions, the embedded HCl droplets reappeared on the ice crystal surfaces during the evaporation of the ice. We estimated that the mole fraction of HCl incorporated into the ice as the HCl droplets (0.19% at -15 degrees C) was ten times larger than the solubility of HCl gas in an ice crystal (0.017%). This picture of the uptake of HCl gas in ice is quite different from the conventional speculation in which HCl gas is confined to ice surfaces.
机译：冰的表面吸引了相当大的关注，因为大气气体在自然界引起各种化学反应的“反应位点”。因此，揭示冰上的大气气体的摄取机制仍然是一个实验挑战。在这里，我们通过先进的光学显微镜在存在氯化氢（HCl）气体中，显示冰晶表面的直接观察，这触发了导致臭氧耗尽的一系列化学反应。我们发现HCl气体诱导了HCl液滴在冰晶表面上的外观。在过饱和水蒸气压下，在冰的生长期间将HCl液滴快速嵌入冰晶中。相反，在不饱和条件下，嵌入的HCl液滴在冰蒸发过程中重新出现在冰晶表面上。我们估计作为HCl液滴（0.15℃）的HCl掺入冰中的HCl的摩尔分数比HCl气体在冰晶中的溶解度（0.017％）的10倍。这种HCL气体在冰中摄取的图像与传统涂布有很大差异，其中HCl气体限制在冰表面上。

著录项

  • 来源
    《Crystal growth & design》 |2018年第7期|共6页
  • 作者

    Nagashima Ken; Sazaki Gen; Hama Tetsuya; Murata Ken-ichiro; Furukawa Yoshinori;

  • 作者单位

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19 W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19 W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19 W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19 W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19 W8 Sapporo Hokkaido 0600819 Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号