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首页> 外文期刊>Crystal growth & design >Crystal Facet Engineering in Ga-Doped ZnO Nanowires for Mid-Infrared Plasmonics
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Crystal Facet Engineering in Ga-Doped ZnO Nanowires for Mid-Infrared Plasmonics

机译：用于中红外血管的GA掺杂ZnO纳米线中的水晶面工程

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摘要

The metal-organic chemical vapor deposition growth of various Ga-doped ZnO nanostructures for plasmonics is investigated, with a particular focus on the nanowire facet transformations induced by the addition of trimethylgallium in the gas phase. For nonintentionally doped spontaneous ZnO nanowires, the aspect ratio is strongly decreased due to residual Ga in the reactor, and the shape evolves rapidly toward Christmastree-like and hierarchical structures upon intentional Ga doping. Regarding ZnO/ZnO:Ga core-shell structures, a change of the smooth initial Moriented facets occurs, with the development of {20 (2) over bar1} surfaces, and further {10 (1) over bar1} and {0001} surfaces. Interestingly, a similar evolution of the lateral roughness is observed in Au-catalyzed doped nanowires. High concentrations of Ga in the grown nanostructures are revealed by photoluminescence and confirmed by Rutherford backscattering spectrometry. First photoacoustic measurements show an optical absorption at 6 mu m, evidencing that the degenerated material is suitable for plasmonics applications in the infrared range. The influence of Ga doping on the facet transformations and the occurrence of unexpected {0001} polar surfaces are discussed. The results can be mainly understood by a Ga surfactant effect (at least partial) responsible for the modification of the surface energies and kinetics. Density functional calculations support the floating behavior of the negatively charged Ga- ion on the growing surface.
机译：研究了各种Ga掺杂的ZnO纳米结构的金属 - 有机化学气相沉积生长，特别侧重于通过在气相中加入三甲基镓诱导的纳米线小刻度变换。对于非直接掺杂的自发ZnO纳米线，由于反应器中的残留Ga，纵横比强烈地降低，并且在有意的GA掺杂时，形状迅速地向ChristCleTree的类似和分层结构演变。关于ZnO / ZnO：GA核心壳结构，发生平滑初始的平面的变化，随着BAR1}表面的开发，以及进一步{10（1）上方的BAR1}和{0001}曲面。有趣的是，在Au催化的掺杂纳米线中观察到横向粗糙度的类似演变。通过光致发光揭示生长纳米结构中的高浓度Ga，并通过Rutherford反向散射光谱法证实。第一光声测量显示在6μm处的光学吸收，证明退化材料适用于红外范围中的血管型应用。讨论了Ga掺杂对小平面变换的影响和意外{0001}极谱的发生。通过对表面能和动力学的改变，负责的GA表面活性剂效应（至少部分）可以主要理解结果。密度函数计算支持越来越多的表面上带负电的GA-离子的浮动行为。

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  • 来源
    《Crystal growth & design》 |2018年第8期|共9页
  • 作者

    Sallet Vincent; Sartel Corinne; Hassani Said; Vilar Christele; Amiri Gaelle; Lusson Alain; Jomard Francois; Galtier Pierre; Lefebvre Isabelle; Delerue Christophe; Hamza Mohamed K.; Canu Bruno; Masenelli Bruno;

  • 作者单位

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Paris Saclay Univ Versailles St Quentin Yvelines CNRS Grp Etud Matiere Condensee GEMAC 45 Ave Etats Unis F-78035 Versailles France;

    Univ Valenciennes ISEN Cent Lille Univ Lille CNRS UMR IEMN 8520 F-59000 Lille France;

    Univ Valenciennes ISEN Cent Lille Univ Lille CNRS UMR IEMN 8520 F-59000 Lille France;

    Univ Lyon CNRS CPE UCBL INSA Lyon ECL INL UMR5270 F-69621 Villeurbanne France;

    Univ Lyon CNRS CPE UCBL INSA Lyon ECL INL UMR5270 F-69621 Villeurbanne France;

    Univ Lyon CNRS CPE UCBL INSA Lyon ECL INL UMR5270 F-69621 Villeurbanne France;

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  • 正文语种 eng
  • 中图分类 晶体学;
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