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Electronic Transport Properties Governed by Polarity Control through Tailoring of ZnO Bilayer Structures

机译：通过裁剪ZnO双层结构的极性控制来治理电子传输物理

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摘要

It is critical to reveal how crystalline polarity correlates with the electronic transport properties in polar semiconductors, such as zinc oxide (ZnO), for the development of materials with properties tailored for specific optoelectronic applications. In this paper, we investigate the structure-property relationships in ZnO films by means of tailoring the polarity of homostructural ZnO bilayers that are subjected to an external substrate bias (V-sub) during deposition. Since the probability of incorporating defects and impurities in ZnO depend on the crystalline facet, the polarity of ZnO should be a critical parameter in determining electronic conductivity. The electric conductivity and Hall mobility of the ZnO films deposited under positive V-sub were much higher than those deposited under negative V-sub. Further investigations of the homostructural ZnO bilayer films, where different signs and magnitudes of V-sub were applied, revealed that the polarity is responsible for electronic conductivity of the ZnO films in this study.
机译：揭示结晶极性如何与极性半导体（例如氧化锌（ZnO））的电子传输性能相关的是至关重要的，用于开发用于针对特定光电应用的性能的材料。在本文中，我们通过定制在沉积期间剪裁在沉积期间进行外部基板偏置（V-Sub）的主体结构ZnO双层的极性来研究ZnO膜中的结构性质关系。由于在ZnO中掺入缺陷和杂质的概率取决于晶面，因此ZnO的极性应该是确定电子电导率的关键参数。沉积在阳性V-Sub下沉积的ZnO膜的电导率和霍尔迁移率远高于阴性V-亚沉积物。进一步研究了同性恋ZnO双层膜的研究，其中应用了不同的V-Sub的不同征征和幅度，表明极性负责该研究中ZnO膜的电子电导率。

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  • 来源
    《Crystal growth & design》 |2018年第10期|共8页
  • 作者

    Ohsawa Takeo; Tsunoda Kei; Yamagata Yoshihito; Dierre Benjamin; Grachev Sergey; Montigaud Herve; Ishigaki Takamasa; Ohashi Naoki;

  • 作者单位

    NIMS 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    NIMS 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    NIMS 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    NIMS NIMS St Gobain Ctr Excellence Adv Mat 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan;

    NIMS NIMS St Gobain Ctr Excellence Adv Mat 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan;

    NIMS NIMS St Gobain Ctr Excellence Adv Mat 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan;

    Hosei Univ Grad Sch Sci &

    Engn Koganei Tokyo 1848584 Japan;

    NIMS 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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