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首页> 外文期刊>Crystal growth & design >Growth Direction Control of ZnO Nanorods on the Edge of Patterned Indium - Tin Oxide/Aluminum-Doped Zinc Oxide Bilayers
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Growth Direction Control of ZnO Nanorods on the Edge of Patterned Indium - Tin Oxide/Aluminum-Doped Zinc Oxide Bilayers

机译：图案铟 - 氧化铟锡/掺杂氧化锌双层边缘ZnO纳米棒的生长方向控制

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摘要

ZnO nanorods were grown on the edge of patterned indiumtin oxide/aluminum-doped zinc oxide (ITO/AZO) bilayers by a hydrothermal method. Since the mask ITO layer covered the AZO seed layer, the ZnO nanorods grew radially on the edge of the AZO seed layer. By etching the as-patterned ITO/AZO bilayers with dilute HCl solution, the under-cut space is created under the ITO layer. We found that the under-cut space is the key for the vertical growth direction of ZnO nanorods on the etched-edge of the AZO seed layer. Only the ZnO nuclei phase exactly in parallel to the substrate can extend out from the under-cut space and provides the (0002) plane for the growth of the vertical ZnO nanorods. Interestingly, we found that the ZnO nanorods grew laterally on the etched-edge of the patterned ITO/AZO bilayers prepared with 400 degrees C substrate temperature. Due to the higher crystallinity of the AZO seed layer (400 degrees C), the etched-edge microstructure is different from that of the AZO seed layers prepared at room temperature and 150 degrees C. As a result, the hexagonal ZnO nuclei phase grown on the etched-edge surface of the AZO seed layer (400 degrees C) has the (0002) preferred-plane facing the opening of the under-cut space. Therefore, the ZnO nanorods can grow horizontally on the exposed polar c-plane (0002) of the hexagonal ZnO nuclei phase along the substrate. By manipulating the under-cut etching space dimension and the surface microstructure on the etched-edge of the AZO seed layer, the growth direction of ZnO nanorods can be controlled.
机译：通过水热法在图案化的铟氧化铟/铝掺杂氧化锌（ITO / AZO）双层的边缘上生长ZnO纳米棒。由于掩模ITO层覆盖了偶氮种子层，因此ZnO纳米棒在偶氮种子层的边缘上径向增长。通过用稀HCl溶液蚀刻以稀释的ITO / AZO双层，在ITO层下产生欠切削空间。我们发现欠闸空​​间是ZnO纳米棒对偶氮种子层的蚀刻边缘的垂直生长方向的关键。只有与基板完全平行的ZnO核相可以从下切割空间延伸，并为垂直ZnO纳米棒的生长提供（0002）平面。有趣的是，我们发现ZnO纳米码在用400c℃温度制备的图案化ITO /偶氮双层的蚀刻边缘上横向增长。由于偶氮种子层的结晶度较高（400℃），蚀刻边缘微观结构与室温下制备的偶氮种子层的结晶性不同，因此，六边形ZnO核相生长偶氮种子层（400℃）的蚀刻边缘表面具有面向欠切割空间的开口的（0002）优选的平面。因此，ZnO纳米棒可以沿着基材水平地生长在六方ZnO核相的暴露极性C面（0002）上。通过操纵诸如偶氮种子层的蚀刻边缘上的切割蚀刻空间尺寸和表面微观结构，可以控制ZnO纳米棒的生长方向。

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