...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ACS applied materials & interfaces >ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells
【24h】

ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells

机译：ZnO：Ti：Ti：生长机理及应用作为硅纳米线太阳能电池中有效的透明导电氧化物

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the quest for the replacement of indium tin oxide (ITO), Ti-doped zinc oxide (TZO) films have been synthesized by atomic layer deposition (ALD) and applied as an n-type transparent conductive oxide (TCO). TZO thin films were obtained from titanium (IV) i-propoxide (TTIP), diethyl zinc, and water by introducing TiO2 growth cycle in a ZnO matrix. Process parameters such as the order of precursor introduction, the cycle ratio, and the film thickness were optimized. The as-deposited films were analyzed for their surface morphology, elemental stoichiometry, optoelectronic properties, and crystallinity using a variety of characterization techniques. The growth mechanism was investigated for the first time by in situ quartz crystal microbalance measurements. It evidenced different insertion modes of titanium depending on the precursor introduction, as well as the etching of Zn-Et surface groups by TTIP. Resistivity as low as 1.2 X 10(-3 )Omega cm and transmittance >80% in the visible range were obtained for 72-nm-thick films. Finally, the first application of ALD-TZO as TCO was reported. TZO films were successfully implemented as top electrodes in silicon nanowire solar cells. The unique properties of TZO combined with conformal coverage realized by the ALD technique make it possible for the cell to show almost flat external quantum efficiency (EQE) response, surpassing the bell-like EQE curve seen in devices with a sputtered ITO top electrode.
机译：在追求替代氧化铟锡（ITO）时，通过原子层沉积（ALD）合成了Ti掺杂的氧化锌（TZO）膜，并用作n型透明导电氧化物（TCO）。通过在ZnO基质中引入TiO 2生长循环从钛（IV）I-丙醇氧化物（TTIP），二乙基锌和水中获得TZO薄膜。优化了工艺参数，例如前体引入，循环比和膜厚度的顺序。通过各种表征技术分析其表面形态，元素化学计量，光电性和结晶度的沉积薄膜。通过原位石英晶体微稳定测量首次研究了生长机制。根据前体介绍，它证明了不同的钛的插入模式，以及通过TTIP蚀刻Zn-Et表面基团。对于72nm厚的薄膜，获得了低至1.2×10（-3）ωcm的电阻率低至1.2×10（-3）ωcm和可见范围中的透射率> 80％。最后，报道了Ald-Tzo作为TCO的第一次应用。在硅纳米线太阳能电池中成功地实现了TZO薄膜作为顶部电极。 TZO与ALD技术实现的共形覆盖相结合的独特性质使得电池可以显示几乎扁平的外部量子效率（EQE）响应，超过在具有溅射的ITO顶电极的器件中看到的钟形EQE曲线。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号