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首页> 外文期刊>ACS applied materials & interfaces >Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal-Organic Vapor-Phase Epitaxy and Their Application in Photodetectors
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Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal-Organic Vapor-Phase Epitaxy and Their Application in Photodetectors

机译：金属 - 有机气相外延及其在光电探测器中的晶片级钼二硫化钼/石墨烯异质结构的外延生长

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摘要

Van der Waals heterostructures have attracted increasing interest, owing to the combined benefits of their constituents. These hybrid nanostructures can be realized via epitaxial growth, which offers a promising approach for the controlled synthesis of the desired crystal phase and the interface between van der Waals layers. Here, the epitaxial growth of a continuous molybdenum disulfide (MoS2) film on large-area graphene, which was directly grown on a sapphire substrate, is reported. Interestingly, the grain size of MoS2 grown on graphene increases, whereas that of MoS2 grown on SiO2 decreases with an increasing amount of hydrogen in the chemical vapor deposition reactor. In addition, to achieve the same quality, MoS2 grown on graphene requires a much lower growth temperature (400 degrees C) than that grown on SiO2 (580 degrees C). The MoS2/graphene heterostructure that was epitaxially grown on a transparent platform was investigated to explore its photosensing properties and was found to exhibit inverse photoresponse with highly uniform photoresponsivity in the photodetector pixels fabricated across a full wafer. The MoS2/graphene heterostructure exhibited ultrahigh photoresponsivity (4.3 x 10(4) A W-1) upon exposure to visible light of a wide range of wavelengths, confirming the growth of a high-quality MoS2/graphene heterostructure with a clean interface.
机译：由于成分的综合益处，van der Waals异质结构引起了越来越兴趣。这些杂合纳米结构可以通过外延生长实现，其提供了一种有希望的方法，用于控制所需晶相的合成和范德瓦尔斯层之间的界面。这里，报道了在大面积石墨烯上直接生长在蓝宝石衬底上的连续钼二硫化物（MOS2）膜的外延生长。有趣的是，在石墨烯上生长的MOS2的晶粒尺寸增加，而在SiO 2上生长的MOS2的MOS2随着化学气相沉积反应器中的氢量而降低。此外，为了获得相同的质量，石墨烯生长的MOS2需要比SiO 2（580℃）上生长的生长温度（400℃）更低。在透明平台上外延生长的MOS2 /石墨烯异质结构被研究以探讨其光敏性质，并且发现在横跨晶片上制造的光电检测器像素中具有高度均匀的光响应性的逆光学。 MOS2 /石墨烯异质结构在暴露于宽范围波长范围的可见光时表现出超高的光学转换率（4.3×10（4）W-1），确认具有清洁界面的高质量MOS2 /石墨烯异质结构的生长。

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