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Strain-Engineered Ferroelastic Structures in PbTiO3 Films and Their Control by Electric Fields

机译:PBTIO3薄膜中的应变工程脱柔结构及其电场控制

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摘要

We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO3 thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a(1)/a(2) superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO3 on GdScO3-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.
机译:我们在PBTIO3薄膜中的产生,改进和设计中的外延应变,膜厚度和电场之间的相互作用。应变和厚度大大影响形成的结构,提供所得自组装的两个可变参数化。在应用的电场下,这些应变工程的脱柔结构是高度耐型的,特别是当A / C和A(1)/ A(2)超级共存时。为了重新配置厌烤结构并达到自组装的纳米级有序形态,纯铁电切换在A / C超级中的单个C域是必不可少的。然而,在大多数情况下,电写的铁弹性结构的稳定性是短暂的;弛豫过程的速度敏感地取决于应变和厚度。仅在低拉伸应变下 - 根据GDSCO3上的PBTIO3 - 并且低于临界厚度的情况,电造成的A / C超域结构变得稳定,使其与可重新配置的纳米级电子或非挥发性机电应用相关。

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