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首页> 外文期刊>ACS applied materials & interfaces >Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructures
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Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructures

机译：基于WSE2 / SNSE2的多功能电子设备垂直范德瓦尔斯异质结构

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摘要

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far away from those of existing (Si, Ge, and III-V bulk material based) technologies. Here, we report high-performance heterostructure devices based on vertically stacked tungsten diselenide and tin diselenide. Due to the unique band alignment and the atomic thickness of the material, both charge carrier transport and energy barrier can be effectively modulated by the applied electrical field. As a result, the heterostructure devices show superb characteristics, with a high current on/off ratio of similar to 3 x 10(8), an average subthreshold slope of 126 mV/dec over 5 dec of current change due to band-to-band tunneling, an ultrahigh rectification ratio of similar to 3 x 10(8), and a current density of more than 10(4) A/cm(2). Furthermore, a small signal half-wave rectifier circuit based on a majority-carrier-transport-dominated diode is successfully demonstrated, showing great potential in future high-speed electronic applications.
机译：通过堆叠各种二维材料而形成的范德瓦尔斯异质结构在电子应用中是有前途的。然而，基于Van der Waals异质结构的大多数报告的电子设备的性能远离现有（Si，Ge和III-V散装材料的基础）技术。在这里，我们报告基于垂直堆叠的钨丁烯甲烷和锡肉体硒的高性能异质结构装置。由于具有独特的带对准和材料的原子厚度，可以通过所施加的电场有效地调制电荷载体传输和能量屏障。结果，异质结构装置显示出高度的特性，具有与3×10（8）相似的高电流接通/截止比，平均亚阈值斜率为126 mV / DEC超过5多道电流变化导致的带 - 频带隧道，超高的整流比与3×10（8），电流密度大于10（4）/ cm（2）。此外，成功地证明了基于多数载波传输主导二极管的小信号半波整流电路，在未来的高速电子应用中显示出很大的潜力。

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