Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

著录项

• 来源
  《ACS applied materials & interfaces》 |2019年第44期|共9页
• 作者

  Masaya Kondo; Takafumi Uemura; Fumitaka Ishiwari; Takashi Kajitani; Yoshiaki Shoji; Masato Morita; Naoko Namba; Yumi Inoue; Yuki Noda; Teppei Araki; Takanori Fukushima; Tsuyoshi Sekitani;

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• 作者单位

  The Institute of Scientific and Industrial Research Osaka University;

  The Institute of Scientific and Industrial Research Osaka University;

  Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology;

  Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology;

  Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology;

  Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology;

  Advanced Photonics and Biosensing Open Innovation Laboratory National Institute of Advanced Industrial Science and Technology Photonics Center P3 Bldg. 2-1;

  The Institute of Scientific and Industrial Research Osaka University;

  The Institute of Scientific and Industrial Research Osaka University;

  The Institute of Scientific and Industrial Research Osaka University;

  Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology;

  The Institute of Scientific and Industrial Research Osaka University;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类 化学工业;
• 关键词

  organic thin-film transistors; 1/lt; igt; flt; /igt; noise; self-assembled layers; low-noise device; trap density; contact resistance;

  机译：有机薄膜晶体管;1 /＆lt;i＆gt;f 3。/ i＆gt;噪音;自组装层;低噪声装置;陷阱密度;接触电阻;