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首页> 外文期刊>ACS applied materials & interfaces >Evaluation of Transport Parameters in MoS2/Graphene Junction Devices Fabricated by Chemical Vapor Deposition
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Evaluation of Transport Parameters in MoS2/Graphene Junction Devices Fabricated by Chemical Vapor Deposition

机译：化学气相沉积制造的MOS2 /石墨烯接合装置中运输参数的评价

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摘要

We demonstrated imaging of the depletion layer in a MoS2/graphene heterojunction fabricated by chemical vapor deposition and obtained their transport parameters such as diffusion length, lifetime, and mobility by using scanning photocurrent microscopy (SPCM). The device exhibited a n-type operation, which was determined by the MoS2 layer with a lower mobility. The SPCM revealed the presence of the depletion layer at the heterojunction, whereas graphene provided an excellent electrical contact for the MoS2 layer without resulting in a rectifying behavior, even if they were anchored within a very short range. The polarity of the photocurrent signal switched when we applied a drain-source bias voltage, from which we extracted the potential barrier at the junction. More importantly, a bias-dependent SPCM allowed us to simultaneously record the diffusion lengths of both majority and minority carriers for the respective MoS2 and graphene layers. By combining the diffusion lengths with the lifetimes measured by femtosecond SPCM, we determined the electron and hole mobilities in each layer, from which we found that the electron mobility (160 cm(2) V-1 s(-1)) was higher than the hole mobility (80 cm(2) V-1 s(-1)) in MoS2, whereas the hole mobility (15 000 cm(2) V-1 s(-1)) was relatively higher in graphene.
机译：我们在通过化学气相沉积制造的MOS2 /石墨烯异质结中证明了耗尽层的成像，并通过使用扫描光电流显微镜（SPCM）获得其传输参数，例如扩散长度，寿命和迁移率。该装置表现出n型操作，该操作由MOS2层确定，具有较低的迁移率。 SPCM在异质结上揭示了耗尽层的存在，而石墨烯也提供了用于MOS2层的优异电触点，而不会导致整流行为，即使它们在非常短的范围内锚固。当我们施加漏极源极偏置电压时，光电流信号的极性切换，从中提取了在结处的潜在屏障。更重要的是，偏置依赖性SPCM允许我们同时记录各多数MOS2和石墨烯层的多数和少数载波的扩散长度。通过将扩散长度与由飞秒SPCM测量的寿命组合，我们确定了每层的电子和孔迁移率，我们发现电子迁移率（160cm（2）V-1s（-1））高于在MOS2中的空穴迁移率（80cm（2）V-1s（-1）），而气孔迁移率（15 000cm（2）v-1s（-1）的石墨烯相对较高。

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