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首页> 外文期刊>ACS applied materials & interfaces >Highly Controllable and Efficient Synthesis of Mixed-Halide CsPbX3 (X = Cl, Br, I) Permiskite QDs toward the Tunability of Entire Visible Light
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Highly Controllable and Efficient Synthesis of Mixed-Halide CsPbX3 (X = Cl, Br, I) Permiskite QDs toward the Tunability of Entire Visible Light

机译：高卤化物CSPBX3（X = CL，BR，I）高度可控和高效合成的合成型QDS朝向整个可见光的可调性

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摘要

CsPbX3 (X = Cl, Br, I) perovskite quantum dots (PQDs) have been intensively investigated on photoelectric devices due to their superior optical properties. To date, the stability of CsPbX3 PQDs is still an open challenge. The previous mixed-halide CsPbX3 PQDs were generally obtained via the anion-exchange method at 40 degrees C. Here, the single- and mixed-halide CsPbX3 PQDs are synthesized at high temperature via the hot injection technique. The surface ligands could thus be strongly coordinated onto the surface of the PQDs, which dramatically improve the optical properties of the PQDs. The resulting CsPbX3 PQDs have high quantum yield (QY, 40-95%), narrow full width at half-maximum (FWHM) (the narrowest FWHM <10 nm), tunable band gap (408-694 nm), and highly strong photostability. The variation of their emission peaks upon anion atoms is well-supported by the theoretical band gaps calculated by the density functional theory calculations with the alloy formula correction. Hence, these PQDs show great potential as good candidates for photoelectric devices.
机译：CSPBX3（X = CL，BR，I）由于其优异的光学性质，在光电装置上被密集地研究了钙钛矿量子点（PQD）。迄今为止，CSPBX3 PQD的稳定性仍然是一个开放的挑战。先前的混合卤化物CSPBX3 PQD通常通过阴离子交换法在40℃下获得。这里，通过热喷射技术在高温下合成单卤和卤化物CSPBX3 PQD。因此，表面配体可以强烈地协调在PQD的表面上，这显着改善了PQD的光学性质。得到的CSPBX3 PQD具有高量子产率（QY，40-95％），半最大（FWHM）的窄全宽（最窄的FWHM <10nm），可调谐带隙（408-694nm），光稳定性高。通过利用合金公式校正的密度泛函理论计算计算的理论带隙，对阴离子原子的发射峰的变化得到了很好的支持。因此，这些PQDS显示出光电器件的良好候选者的巨大潜力。

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  • 来源
    《ACS applied materials & interfaces》 |2017年第38期|共9页
  • 作者

    Su Ying; Chen Xuejiao; Ji Wenyu; Zeng Qinghui; Ren Zhongyuan; Su Zisheng; Liu Lei;

  • 作者单位

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys State Key Lab Luminescence &

    Applicat Dong Nanhu Rd 3888 Changchun 130033 Jilin Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    all-inorganic CsPbX3 (X = Cl; Br; I) perovskite QDs; hot injection technique; mixed-halide CsPbX3 perovskite QDs; narrow FWHM; photostability;

    机译：全无机CSPBX3（X = CL;B;I）钙钛矿QD;热注射技术;混合卤化物CSPBX3钙钛矿QD;窄FWHM;光稳定性;

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