Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films

Dan  Han; Zhenhua  Wang; Xuan P. A.  Gao; Zhidong  Zhang

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Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films

机译：掺杂剂均匀性对Cuxbi2se3薄膜电子传输的影响

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The contribution of topological insulator surface states to their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality Cu_(x )Bi_(2)Se_(3) films prepared by pulsed laser deposition with a designed sequential deposition process of Bi_(2)Se_(3) and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron–electron interaction (2D EEI) effect becomes more evident below ～25 K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the Cu_(x )Bi_(2)Se_(3) films was verified by the Hikami–Larkin–Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspects for the further study of the transport properties of disordered topological insulators.

机译：拓扑绝缘体表面态对其输运性质的贡献可以通过掺杂来调节，但在以前的研究中，掺杂剂的均匀性效应被忽略。在这项工作中，我们研究了均匀度对脉冲激光沉积高质量Cu_2;（x）Bi_2;（2）Se_3）薄膜的影响，该薄膜采用Bi_2;（2）Se_3和Cu的顺序沉积工艺制备。研究发现，铜掺杂的均匀性越高，在弱无序的存在下，在～25K以下，二维电子-电子相互作用（2D EEI）效应越明显，在低温下，零磁场附近的弱反局域化（WAL）效应越明显。此外，通过对WAL效应的Hikami–Larkin–Nagaoka（HLN）模型分析，验证了Cu_U2（x）Bi_2）Se_3薄膜的拓扑表面态传导。这一研究为进一步研究无序拓扑绝缘体的输运性质开辟了新的方向。

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《Crystal growth & design》 |2021年第1期|共9页
作者
Dan Han; Zhenhua Wang; Xuan P. A. Gao; Zhidong Zhang;
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Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences;

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences;

Department of Physics Case Western Reserve University;

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences;

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正文语种 eng
中图分类晶体学;
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11. Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films [O] . -1

机译：掺杂剂均匀性对Cuxbi2Se3薄膜电子传输的影响
12. Redistribution of Dopant and Impurity Concentrations during the Formation of Uniform WSi2 Films by RTP [R] . Siegal, M. P., Santiago, J. J. 1988

机译：RTp制备均匀Wsi2薄膜时掺杂剂和杂质浓度的重新分布

Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films

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