Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs

Yan Shumeng; Feng Meixin; Fan Shizhao; Zhou Rui; Tang Yongjun; Jiang Tianhao; Liu Jianxun; Zhou Yu; Sun Qian; Yang Hui

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Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs

机译：通过大型GaN基隧道结LED中纳米盖的埋藏P-GaN的激活

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摘要

In GaN-based light-emitting diodes (LEDs), tunnel junctions offer a way of replacing the highly resistive p-type GaN (p-GaN) ohmic contact with a low-resistance n-GaN ohmic contact. However, the p-GaN would be re-passivated by hydrogen atoms during the subsequent growth of n-GaN in a metal-organic chemical vapor deposition (MOCVD) chamber. The n-GaN layer, acting as a hydrogen diffusion barrier, hinders the thermal activation of the underlying p-GaN. Here, we report a method to thermally activate the buried p-GaN in tunnel junction LED (TJ-LED) through vertically aligned nanopipe arrays across the top n-GaN layer, which provides a hydrogen outgassing passage. The fabrication of nanopipes is realized via inductive coupled plasma etching using a mask prepared by self-assembled nanosphere arrays. As a result, we attain large-size TJ-LED chips, exhibiting nearly equivalent p-GaN activation and superior light extraction compared to conventional LEDs. Specifically, the light extraction efficiency is boosted by 44% relative to conventional LEDs at an injection current density of 100 A cm(-2).

机译：在GaN基发光二极管（LED）中，隧道结提供了一种用低电阻n-GaN欧姆接触代替高电阻p型GaN（p-GaN）欧姆接触的方法。然而，在随后的金属有机化学气相沉积（MOCVD）室中生长n-GaN期间，p-GaN将被氢原子重新钝化。n-GaN层作为氢扩散屏障，阻碍了底层p-GaN的热激活。在这里，我们报告了一种通过垂直排列的纳米管阵列在顶部n-GaN层上热激活埋置的p-GaN隧道结LED（TJ-LED）的方法，该方法提供了一个氢气排出通道。利用自组装纳米球阵列制备的掩模，通过感应耦合等离子体刻蚀实现了纳米管的制备。因此，我们获得了大尺寸的TJ-LED芯片，与传统LED相比，表现出几乎相当的p-GaN激活和优越的光提取。具体而言，在100 A cm（-2）的注入电流密度下，与传统LED相比，光提取效率提高了44%。

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来源
《Nanotechnology》 |2021年第30期|共7页
作者
Yan Shumeng; Feng Meixin; Fan Shizhao; Zhou Rui; Tang Yongjun; Jiang Tianhao; Liu Jianxun; Zhou Yu; Sun Qian; Yang Hui;
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作者单位

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

Univ Sci &

Technol China Sch Nanotech &

Nanobion Hefei 230026 Peoples R China;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
LED; tunnel junction; GaN; p-type activation; light-extraction; nanopipe arrays;

机译：带路;隧道连接处;甘;p型激活;光提取;纳米管阵列;

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专利

1. Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces [J] . GAO Hai-Yong, YAN Fa-Wang, FAN Zhong-Chao, 中国物理快报：英文版 . 2008,第009期
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3. Numerical Optimization of Tunnel-recombination Junction and Optical Absorption Properties of a-Si:H/a-SiGe:H Double-junction Solar Cell [J] . KE Shaoying, WANG Chong, PAN Tao, 硅酸盐学报（英文版） . 2015,第001期
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机译：使用ITO / n〜+ -InGaN / InGaN超晶格/ n〜+ -GaN / p-GaN隧道结的高亮度GaN基发光二极管
5. High brightness GaN-based light emitting diodes using ITO(+)-InGaN/InGaN superlattice(+)-GaN/p-GaN tunneling junction [J] . Lee SH, Son HK, Kim SJ, Physica Status Solidi. A, Applied Research . 2004,第12期

机译：使用ITO / n（+）-InGaN / InGaN超晶格/ n（+）-GaN / p-GaN隧道结的高亮度GaN基发光二极管
6. n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction [J] . Ling Li, Yuantao Zhang, Long Yan, AIP Advances . 2016,第12期

机译：具有掩埋极化感应隧穿结的n-ZnO / p-GaN异质结发光二极管
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机译：埋地隧道接触结在GaN的光 - 偏见二极管
8. X-ray characterization of buried layers and interfaces in europium oxide based spin-filter tunnel junctions. [D] . Negusse, Ezana. 2008

机译：X射线表征基于氧化euro的自旋滤波器隧道结中的掩埋层和界面。
9. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
10. n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction [O] . Ling Li, Yuantao Zhang, Long Yan, 2016

机译：n-ZnO / p-GaN异质结发光二极管，具有掩埋极化诱导隧道结
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机译：在简单的牺牲衬底上外延生长GaN基LED。总结报告

Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs

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