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Growth of long III-As NWs by hydride vapor phase epitaxy

机译：氢化物气相外延的Long III-AS NW的生长

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In this review paper, we focus on the contribution of hydride vapor phase epitaxy (HVPE) to the growth of III-As nanowires (NWs). HVPE is the third epitaxial technique involving gaseous precursors together with molecular beam epitaxy (MBE) and metal-organic VPE (MOVPE) to grow III-V semiconductor compounds. Although a pioneer in the growth of III-V epilayers, HVPE arrived on the scene of NW growth the very last. Yet, HVPE brought different and interesting insights to the topic since HVPE is a very reactive growth system, exhibiting fast growth property, while growth is governed by the temperature-dependent kinetics of surface mechanisms. After a brief review of the specific attributes of HVPE growth, we first feature the innovative polytypism-free crystalline quality of cubic GaAs NWs grown by Au-assisted vapor-liquid-solid (VLS) epitaxy, on exceptional length and for radii down to 6 nm. We then move to the integration of III-V NWs with silicon. Special emphasis is placed on the nucleation issue experienced by both Au-assisted VLS MOVPE and HVPE, and a model demonstrates that the presence of Si atoms in the liquid droplets suppresses nucleation of NWs unless a high Ga concentation is reached in the catalyst droplet. The second known issue is the amphoteric behavior of Si when it is used as doping element for GaAs. On the basis of compared MBE and HVPE experimental data, a model puts forward the role of the As concentration in the liquid Au-Ga-As-Si droplets to yield p-type (low As content) or n-type (high As content) GaAs:Si NWs. We finally describe how self-catalysed VLS growth and condensation growth are implemented by HVPE for the growth of GaAs and InAs NWs on Si.
机译：在这篇综述文章中，我们重点讨论了氢化物气相外延（HVPE）对III As纳米线（NWs）生长的贡献。HVPE是第三种外延技术，包括气体前驱体、分子束外延（MBE）和金属有机VPE（MOVPE）来生长III-V半导体化合物。尽管HVPE是III-V外延层生长的先驱，但它是最后一次出现在NW生长的现场。然而，由于HVPE是一个反应性很强的生长系统，表现出快速生长特性，而生长受表面机制的温度依赖动力学控制，因此HVPE为该主题带来了不同且有趣的见解。在简要回顾了HVPE生长的具体属性之后，我们首先介绍了采用金辅助汽-液-固（VLS）外延生长的立方砷化镓纳米线的创新性无多型结晶质量，其长度超乎寻常，半径小于6nm。然后我们转向III-V NWs与硅的集成。特别强调了金辅助VLS MOVPE和HVPE所经历的成核问题，一个模型表明，液滴中的硅原子抑制了NWs的成核，除非催化剂液滴中达到高Ga浓度。第二个已知问题是硅用作GaAs掺杂元素时的两性行为。在比较MBE和HVPE实验数据的基础上，一个模型提出了液态Au-Ga-As-Si液滴中As浓度对产生p型（低As含量）或n型（高As含量）GaAs:Si纳米线的作用。最后，我们描述了如何通过HVPE实现自催化VLS生长和冷凝生长，以在硅上生长GaAs和InAs纳米线。

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