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Alpha-ray spectrometry at high temperature by using a compound semiconductor detector

机译:使用化合物半导体检测器的高温α射线光谱法

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摘要

The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an 241Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation.
机译:常规辐射探测器在恶劣环境中的使用受到辐射对探测器材料的损害和温度限制的限制。我们制造了一个基于碳化硅的宽带隙半导体辐射探测器。所有探测器组件均考虑用于高温环境(例如核反应堆堆芯)中。在室温下,使用241Am光源在可变工作电压下测量了辐射响应,尤其是对α粒子的响应。检测器上的温度控制在30°C至250°C。在零偏压操作下测量α粒子光谱。即使检测器在高温下运行,能量分辨率随温度的变化也几乎恒定在3.5%的偏差内。

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