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REQUIRED OPTICAL CHARACTERISTICS OF MATERIALS FOR PHASE-SHIFTING MASKS

机译：移相面膜所需的光学特性

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The reflectivity and transmission of a multiple-layer substrate are simulated to predict the optimum choice of materials for the fabrication of phase-shifting masks for optical Lithography. Two types of materials are described: a transparent shifter layer with a refractive index closely matching that of quartz, and a partially transparent layer (5-15% transmission) inducing a 180 degrees phase shift of light compared with air. A possible refractive index n and extinction coefficient k are defined, for both layers of the partially transparent material. The fabrication tolerances are calculated in terms of refractive index, extinction coefficient, and thickness accuracy. One of the major technological challenges for both material types is to control the thickness to +/-2%, which is required to satisfy the phase-shifting mask specifications for deep UV lithography (+/-0.5% transmission control and +/-4 degrees phase control). These criteria were calculated by the simulation of the phase and transmission errors, thereby inducing a +/-10% linewidth variation of the resist patterns on the wafers. [References: 14]
机译：模拟多层基板的反射率和透射率，以预测用于光学光刻的相移掩模制造材料的最佳选择。描述了两种类型的材料：具有与石英的折射率紧密匹配的折射率的透明移位器层，以及与空气相比引起光180度相移的部分透明层（透射率为5-15％）。对于部分透明材料的两层，都定义了可能的折射率n和消光系数k。根据折射率，消光系数和厚度精度计算制造公差。两种材料类型的主要技术挑战之一是将厚度控制在+/- 2％，这是满足深紫外光刻的相移掩模规格所必需的（+/- 0.5％透射控制和+/- 4％度相位控制）。这些标准是通过模拟相位和透射误差来计算的，从而引起晶片上抗蚀剂图案的线宽变化+/- 10％。 [参考：14]

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