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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Application of AlSi-based materials on approach of chemical stability of embedded layer for bi-layer attenuated phase-shifting mask in 193 nm lithography
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Application of AlSi-based materials on approach of chemical stability of embedded layer for bi-layer attenuated phase-shifting mask in 193 nm lithography

机译：AlSi基材料在双层衰减相移掩模在193 nm光刻中嵌入层化学稳定性方法中的应用

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摘要

AlSi-based films could be formed by a combination of transparent chemical compositions and absorbing elements. When the oxide structure increased with the increasing of atomic percentage of oxygen, the n of AlSi_xO_y appeared to increase while k appeared to decrease in 193 nm. The saturation of formation of AlN and Si_3N_4 in AlSi_xN_y was observed about 4.8 sccm N_2 flow rate. The correlation between optical properties and chemical compositions of AlSi-based films has been described, therefore, the chemical stability of embedded material could be approached. Top layer film with saturation of AlN, Si_3N_4 or Al_2O_3, SiO_2 could provide better chemical stability. Bottom layer with suitable mount of Al and Si chemical structure could provide enough light absorption. With proper combination of top and bottom layer AlSi_xO_y and AlSi_xN_y, embedded material, the optical properties of bi-layer attenuated phase-shifting mask could kept in the range of high transmittance (T%=15-45%). The 0.18-μm-line/space NEB-22 resist pattern exposed by e-beam writer on AlSi_xO_y embedded layer has good resolution. Due to good resist profile, the 0.3-μm-line/space etched pattern of bi-layer AlSi_xO_y was also successfully carried out.
机译：AlSi基薄膜可以通过透明化学成分和吸收元素的组合来形成。当氧化物结构随氧原子百分比的增加而增加时，AlSi_xO_y的n在193 nm处似乎增加，而k在193 nm处减小。在大约4.8sccm的N_2流速下观察到AlSi_xN_y中AlN和Si_3N_4的形成饱和。已经描述了AlSi基薄膜的光学性质和化学组成之间的相关性，因此，可以达到嵌入材料的化学稳定性。 AlN，Si_3N_4或Al_2O_3，SiO_2饱和的顶层薄膜可以提供更好的化学稳定性。铝和硅化学结构合适的底层可以提供足够的光吸收。通过将顶层和底层AlSi_xO_y和AlSi_xN_y嵌入材料进行适当组合，双层衰减相移掩模的光学性能可以保持在高透射率范围内（T％= 15-45％）。电子束写入器在AlSi_xO_y嵌入式层上曝光的0.18μm线/空间NEB-22抗蚀剂图案具有良好的分辨率。由于良好的抗蚀剂分布，双层AlSi_xO_y的0.3-μm线/空间蚀刻图案也已成功完成。

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