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首页> 外文期刊>Microelectronic Engineering >TiSi_xN_y and TiSi_xO_yN_z as Embedded Materials for Attenuated Phase-Shifting Mask in 193 nm
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TiSi_xN_y and TiSi_xO_yN_z as Embedded Materials for Attenuated Phase-Shifting Mask in 193 nm

机译：TiSi_xN_y和TiSi_xO_yN_z作为193 nm衰减相移掩模的嵌入式材料

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摘要

TiSi_xN_y and TiSi_xO_yN_z were presented as new embedded materials for APSM in 193 nm lithography. TiSi_xN_y films were formed by plasma sputtering of Ti (180～230 W) and Si (60～80 W) under Ar (50 sccm) and nitrogen (4～6 sccm). For required phase shift degree θ =180°, the calculated thickness d_180 of Tisi_xN_y film is 82～93 nrn. TiSi_xO_yN_z films were formed by plasma sputtering of Ti (200～ 240 W) and Si (60～80 W) under Ar (50 sccm), nitrogen (4～6 sccm) and oxygen (0.2～0.7 sccm). The d_180 of TiSi_xO_yN_z film is 92～105 nrn. With the thickness d_180, the transmittance at visible wavelength (488, 632.8 nm) for optical alignment is 35～50 for TiSi_xN_y and TiSi_xO_yN_z. Under BCl_3:Cl_2=14:70 sccm, chamber pressure 4 mtorr and RF power 1900 W the dry etching selectivity of TiSi_xN_y over DQN positive resist and fused silica, were found to be 2:1 and 4.8:1, respectively. A TiSi_xN_y embedded layer with 0.6 μm lines/space was successfully patterned.
机译：TiSi_xN_y和TiSi_xO_yN_z作为193 nm光刻中APSM的新型嵌入式材料被提出。在氩气（50 sccm）和氮气（4〜6 sccm）下，通过等离子溅射Ti（180〜230 W）和Si（60〜80 W）形成TiSi_xN_y薄膜。对于所需的相移度θ= 180°，计算得到的Tisi_xN_y膜厚度d_180为82〜93 nrn。 Ti（200〜240 W）和Si（60〜80 W）在氩气（50 sccm），氮气（4〜6 sccm）和氧气（0.2〜0.7 sccm）下等离子溅射形成TiSi_xO_yN_z薄膜。 TiSi_xO_yN_z膜的d_180为92〜105 nrn。厚度为d_180时，TiSi_xN_y和TiSi_xO_yN_z在可见光下的可见光透过率（488，632.8 nm）为35〜50。在BCl_3：Cl_2 = 14：70 sccm，腔室压力4 mtorr和RF功率1900 W下，TiSi_xN_y在DQN正性抗蚀剂和熔融石英上的干法刻蚀选择性分别为2：1和4.8：1。具有0.6μm线/间距的TiSi_xN_y嵌入式层已成功构图。

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