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Imaging profiles of light intensity in the near field: applications to phase-shift photolithography

机译:近场光强度的成像轮廓:在相移光刻中的应用

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We describe a method of imaging the intensity profiles of light in near-field lithographic experiments directly by using a sensitive photoresist. This technique was applied to a detailed study of the irradiance distribution in the optical near field with contact-mode photolithography carried out by use of elastomeric phase masks. The experimental patterns in the photoresist determined by scanning electron microscopy and atomic force microscopy were compared with the corresponding theoretical profiles of intensity calculated by use of a simple scalar analysis; the two correlate well. This comparison makes it possible to improve the theoretical models of irradiance distribution in the near field. Analysis of the images highlights issues in the experimental design, provides a means for the optimization of this technique, and extends its application to the successful fabrication of test structures with linewidths of ~50 nm. # 1998 Optical Society of America OCIS codes: 050.5080, 110.5220, 110.0110.
机译:我们描述了一种直接通过使用敏感的光刻胶在近场光刻实验中成像光强度分布的方法。通过使用弹性体相位掩模,采用接触模式光刻技术将该技术应用于光学近场中辐照度分布的详细研究。将通过扫描电子显微镜和原子力显微镜确定的光致抗蚀剂中的实验图案与通过简单的标量分析计算出的相应强度理论曲线进行了比较;两者之间的相关性很好。这种比较可以改善近场中辐照度分布的理论模型。图像分析突出了实验设计中的问题,为优化该技术提供了一种手段,并将其应用扩展到线宽约50 nm的测试结构的成功制造。 #1998美国光学学会OCIS编码:050.5080、110.5220、110.0110。

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