Measurement of the electron-phonon coupling factor dependence on film thickness and grain size in Au, Cr, and Al

John L. Hostetler; Andrew N. Smith; Daniel M. Czajkowsky

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Measurement of the electron-phonon coupling factor dependence on film thickness and grain size in Au, Cr, and Al

机译：电子-声子耦合因子的测量取决于金，铬和铝中膜厚度和晶粒尺寸

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Femtosecond thermorefiectance data for thin films and bulk quantifies of Au, Cr, and Al are compared with the parabolic two-step thermal diffusion model for the purpose of determining the electron-phonon coupling factor. The thin films were evaporated and sputtered onto different substrates to produce films that vary structurally. The measurement of the electron-phonon coupling factor is shown to be sensitive to grain size and film thickness. The thin-film thermorefiectance data are compared with that of the corresponding bulk material and to a theoretical model relating the coupling rate to the grain-boundary scattering and size effects on the mean free path of the relevant energy carrier.

机译：为了确定电子-声子耦合因子，将薄膜的飞秒热反射数据和Au，Cr和Al的大量定量与抛物线两步热扩散模型进行了比较。蒸发薄膜并将其溅射到不同的基板上以产生结构上变化的薄膜。电子-声子耦合因子的测量显示出对晶粒尺寸和膜厚度敏感。将薄膜热反射数据与相应的块状材料的热反射数据进行比较，并与理论模型进行比较，该模型将耦合速率与晶界散射和尺寸影响相关能量载体的平均自由程联系起来。

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《Applied optics》 |1999年第16期|共7页
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John L. Hostetler; Andrew N. Smith; Daniel M. Czajkowsky;
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1. Measurement of the electron-phonon coupling factor dependence on film thickness and grain size in Au, Cr, and Al [J] . John L. Hostetler, Andrew N. Smith, Daniel M. Czajkowsky Applied optics . 1999,第16期

机译：电子-声子耦合因子的测量取决于金，铬和铝中膜厚度和晶粒尺寸
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Measurement of the electron-phonon coupling factor dependence on film thickness and grain size in Au, Cr, and Al

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