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首页> 外文期刊>Infrared physics and technology >Study on the long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors
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Study on the long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

机译：长波长SiGe / Si异质结内部光发射红外光电探测器的研究

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The theory of internal photoemission in semiconductor heterojunctions has been investigated and the existing model has been extended by incorporating the effect of different effective masses in the active region and the substrate, nonspherical-nonparabolic bands, and the energy loss per collision. Photoresponse measurements on Si1-xGex/Si heterojunction internal photoemission (HIP) infrared photodetectors (IP) have shown that they are fit well by the theory. Qualitative model describing the mechanisms of photocurrent generation in our structures are presented. We also study the effect of a double barrier on the photoresponse spectrum of a SiGe/Si HIP IP. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature; therefore, their cut-off wavelengths can be tuned to the desired region by changing the potential difference across the device and/or changing the device temperature. The barrier heights (correspondingly the cut-off wavelengths) of the samples have been determined from their IP spectra by using the extended model which has the wavelength and doping concentration dependent free carrier absorption parameters. Crown Copyright (c) 2005 Published by Elsevier B.V. All rights reserved.
机译：研究了半导体异质结中的内部光发射理论，并通过结合有源区和衬底中不同有效质量，非球面非抛物线能带以及每次碰撞的能量损失来扩展现有模型。在Si1-xGex / Si异质结内部光电发射（HIP）红外光电探测器（IP）上进行的光响应测量表明，该理论非常适合。提出了描述我们结构中光电流产生机理的定性模型。我们还研究了双势垒对SiGe / Si HIP IP的光响应光谱的影响。研究表明，我们设备的性能在很大程度上取决于所施加的偏压和工作温度。因此，可以通过改变器件两端的电势差和/或改变器件温度，将其截止波长调谐至所需区域。样品的势垒高度（相应的截止波长）已通过使用扩展模型从其IP光谱确定，该模型具有与波长和掺杂浓度有关的自由载流子吸收参数。官方版权（c）2005，Elsevier B.V.保留所有权利。

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