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首页> 外文期刊>Infrared physics and technology >An infrared pyroelectric detector improved by cool isostatic pressing with cup-shaped PZT thick film on silicon substrate
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An infrared pyroelectric detector improved by cool isostatic pressing with cup-shaped PZT thick film on silicon substrate

机译：红外热释电探测器通过在硅基板上冷等静压杯状PZT厚膜而改进

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摘要

In this paper, we presented a new pyroelectric detector with back to back silicon cups and micro-bridge structure. The PZT thick film shaped in the front cup was directly deposited with designed pattern by electrophoresis deposition (EPD). Pt/Ti Metal film, which was fabricated by standard photolithography and lift-off technology, was sputtered to connect the top electrode and the bonding pad. The cold isostatic press (CIP) treatment could be applied to improve the pyroelectric properties of PZT thick film. The infrared (IR) properties the CIP-optimized detector were measured. The voltage responsivity (RV) was 4.5 × 10~2 V/W at 5.3 Hz, the specific detectivity (D ~*) was greater than 6.34 × 10~8 cm Hz ~(1/2) W~(-1) (frequency > 110 Hz), and the thermal time constant was 51 ms, respectively.
机译：在本文中，我们提出了一种具有背对背硅杯和微桥结构的新型热释电探测器。通过电泳沉积（EPD）以设计的图案直接沉积在前杯中成型的PZT厚膜。溅射通过标准光刻和剥离技术制造的Pt / Ti金属膜，以连接顶部电极和焊盘。冷等静压（CIP）处理可用于改善PZT厚膜的热电性能。测量了CIP优化检测器的红外（IR）性能。 5.3 Hz时的电压响应（RV）为4.5×10〜2 V / W，比检测率（D〜*）大于6.34×10〜8 cm Hz〜（1/2）W〜（-1）（频率> 110 Hz），热时间常数分别为51 ms。

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