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首页> 外文期刊>Inorganic Chemistry Communications >A luminescent quadruple stranded dinuclear Eu(III) complex based on 2,8-bis(4',4',4'-trifluoro-1 ',3'-dioxobutyl)-dibenzothiophene for light-emitting diodes
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A luminescent quadruple stranded dinuclear Eu(III) complex based on 2,8-bis(4',4',4'-trifluoro-1 ',3'-dioxobutyl)-dibenzothiophene for light-emitting diodes

机译:一种基于2,8-双(4',4',4'-三氟-1',3'-二氧代丁基)-二苯并噻吩的发光四链双核Eu(III)配合物,用于发光二极管

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摘要

A luminescent quadruple stranded dinuclear Eu(III) complex Na2[Eu2(dbt)4] was synthesized, where H2dbt was 2,8-bis(4',4',4'-trifluoro-T,3'-dioxobutyl)-dibenzothiophene. The complex emits the characteristic red luminescence of Eu~(3+) ion due to the ~5D_0 -> ~7F_J (J = 0-4) transitions under 395 nm-light excitation with a luminescent quantum efficiency of 23%. Bright red light-emitting diodes (LEDs) were fabricated by coating the complex onto 395 nm-emitting InGaN chip. The results indicate that the complex may act as a red component in the fabrication of near UV-based white light-emitting diodes with high color-rendering index.
机译:合成了发光的四链双核Eu(III)络合物Na2 [Eu2(dbt)4],其中H2dbt为2,8-双(4',4',4'-三氟-T,3'-二氧代丁基)-二苯并噻吩。由于在395 nm光激发下〜5D_0->〜7F_J(J = 0-4)跃迁,该配合物发出Eu〜(3+)离子的特征性红色发光,且发光量子效率为23%。通过将复合物涂覆在发射395 nm的InGaN芯片上,可以制造出亮红色的发光二极管(LED)。结果表明,该配合物可以在具有高显色指数的近紫外基白色发光二极管的制造中充当红色成分。

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