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A Novel Sol-Gel Method of Preparation of the LiTaO_3 Thin Film and Its Property Research

机译：LiTaO_3薄膜的新型Sol-Gel制备方法及其性能研究

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摘要

The dielectric constant and the dielectric loss of the LiTaO_3 thin film derived through the experimental method which is called the Sol-Gel method, as well as its pyroelectnc constant and ferroelectric hysteresis loop are explored in the manuscript. In comparison, the dielectric constant and the dielectric loss of the annealed LiTaO_3 thin film derived from Pt(lll)/SiO_2/Si(100) substrate are superior to which are derived from Fluorine-doped tin oxide substrate. The relationships among ferroelectric hysteresis loop and pyroelectnc constant as well as temperature are measured. In room temperature, the dielectric constant of LiTaO_3 film is 45 at a frequency of 10 kHz, the dielectric loss is lower 0.006 than dielectric constant, The remanentpolarization is 10.71 μC-cm~(-2). The pyroelectric coefficient is 1.43×10~(-8) C?cm~(-2)-K~(-1) at 62℃. This proves that the LiTaO3 thin films with high figures of merit (F_v = 0.56xl0~~(10) C? cm-J~(-1), F_D = 0.51×l0~(-8) C?cm?J~(-1)) can be used widely in thermal detectors.
机译：本文探讨了通过实验方法（称为Sol-Gel方法）得到的LiTaO_3薄膜的介电常数和介电损耗，以及其热电常数和铁电磁滞回线。相比之下，源自Pt（III）/ SiO_2 / Si（100）衬底的退火的LiTaO_3薄膜的介电常数和介电损耗优于源自掺杂氟的氧化锡衬底。测量了铁电磁滞回线与热电常数以及温度之间的关系。在室温下，LiTaO_3薄膜在10 kHz频率下的介电常数为45，介电损耗比介电常数低0.006，剩余极化率为10.71μC-cm〜（-2）。在62℃下的热电系数为1.43×10〜（-8）C·cm〜（-2）-K〜（-1）。这证明了具有高品质因数（F_v = 0.56xl0 ~~（10）C？cm-J〜（-1），F_D = 0.51×l0〜（-8）C？cm？J〜（ -1））可广泛用于热探测器。

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