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首页> 外文期刊>Integrated Ferroelectrics >Intrinsic Properties of (100)/(001)-Oriented Epitaxial PZT Thin Films Grown on (100)Si and (100)SrTiO_3 Substrates
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Intrinsic Properties of (100)/(001)-Oriented Epitaxial PZT Thin Films Grown on (100)Si and (100)SrTiO_3 Substrates

机译：（100）Si和（100）SrTiO_3衬底上生长的（100）/（001）取向外延PZT薄膜的本征性质

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摘要

Epitaxial tetragonal 150 nm-thick Pb(Zr_(0.35)Ti_(0.65))O_3 (PZT) films with a (100)/(001) orientation, and one and three in-plane variants were grown at 415, 540 and 540 deg C, respectively, on (100)_cSrRuO_3/(100)SrTiO_3, (100)_cSrRuO_3/(100)_cLaMO_3/ (100)CeO_2/(100) YSZ/(100)Si, and (100)_cSrRuO_3/( 111 )Pt/(100) YSZ/( 100)Si substrates by pulsed-metalorganic chemical vapor deposition, and their domain structure and electrical properties were investigated systematically. The relative dielectric constants at 1 kHz were 370, 400, and 450, respectively, even though all films had the same volume fraction of the c-domains, whereas the dielectric losses were almost the same. The rema-nent polarization and coercive field at the maximum applied electric field of 350 kV/cm were almost the same for all films, 30 mu C/cm~2 and 135 kV/cm, respectively. These results suggest that the intrinsic ferroeletric property of epitaxial ferroelectric film is determined by the relative volume fraction of the c-domains.
机译：具有（100）/（001）取向的外延四边形150 nm厚Pb（Zr_（0.35）Ti_（0.65））O_3（PZT）膜，在415、540和540度下生长了一个和三个面内变体C分别位于（100）_cSrRuO_3 /（100）SrTiO_3，（100）_cSrRuO_3 /（100）_cLaMO_3 /（100）CeO_2 /（100）YSZ /（100）Si和（100）_cSrRuO_3 /（111）Pt上/（100）YSZ /（100）Si衬底通过脉冲金属有机化学气相沉积技术，系统地研究了它们的畴结构和电性能。即使所有膜的c域体积分数相同，在1 kHz时的相对介电常数分别为370、400和450，而介电损耗却几乎相同。在350 kV / cm的最大外加电场下，所有薄膜的剩余极化和矫顽场几乎相同，分别为30μC / cm〜2和135 kV / cm。这些结果表明，外延铁电薄膜的固有铁电性质是由c域的相对体积分数决定的。

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