AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT

TOUHIDUR RAHMAN; MOHAMMAD A. HUQUE; SYED K. ISLAM

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AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT

机译：功率MOSFET，MESFET和AlGaN / GaN HEMT的直流建模的高效数值方法

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摘要

In this paper, an efficient numerical model applicable for wide varieties of long channel field-effect transistors (MOSFET, MESFET, HEMT, etc.) is developed. A set of available data is used to calculate the model parameters and another set of data is used to verify the accuracy of the model. This model provides a single expression that is applicable for the entire range of device biasing and can predict the output parameters with less than 1% error compared to the experimental results. Lagrange polynomial, the highest degree of polynomial for any given set of data, is used to derive the model from available data. This method is efficient in the sense that it can be derived from a limited number of experimental data and since it uses only one equation for entire range of the device operation hence its computational cost is also small.

机译：在本文中，开发了适用于各种长沟道场效应晶体管（MOSFET，MESFET，HEMT等）的有效数值模型。一组可用数据用于计算模型参数，另一组数据用于验证模型的准确性。该模型提供了适用于整个器件偏置范围的单个表达式，并且与实验结果相比，可以预测输出参数且误差小于1％。 Lagrange多项式是任何给定数据集的最高多项式，用于从可用数据中得出模型。从可以从有限数量的实验数据中得出该方法的意义上说，该方法是有效的，并且由于该方法仅在设备操作的整个范围内使用一个方程式，因此其计算成本也很小。

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《International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics》 |2008年第4期|共16页
作者
TOUHIDUR RAHMAN; MOHAMMAD A. HUQUE; SYED K. ISLAM;
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原文格式 PDF
正文语种 eng
中图分类 TN39;
关键词
Device modeling; Numerical modeling; Lagrange polynomial;

机译：设备建模;数值建模;拉格朗日多项式;

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专利

1. AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT [J] . TOUHIDUR RAHMAN, MOHAMMAD A. HUQUE, SYED K. ISLAM International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2008,第4期

机译：功率MOSFET，MESFET和AlGaN / GaN HEMT的直流建模的高效数值方法
2. DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application [J] . Moujahed GASSOUMI, Abdelhamid HELALI, Hassen MAAREF, Results in Physics . 2019,第1期

机译：用于微波功率和高温应用的AlGaN / GaN / BGaN / GaN / Si HEMT的DC和RF特性优化
3. Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials [J] . Raul Rodriguez, Benito Gonzalez, Javier Garcia, Physica status solidi . 2015,第5期

机译：AlGaN / GaN HEMT的数值模拟和紧凑模型，可减轻衬底材料的自热效应
4. Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G~4FET) [C] . Md Sakib Hasan, Samira Shamsir, Mst Shamim Ara Shawkat, Annual Symposium of Connecticut Microelectronics and Optoelectronics Consortium . 2019

机译：多元回归多项式：不同晶体管DC建模的多功能和有效方法（MOSFET，MESFET，HBT，HEMT和G〜4FET）
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs [O] . Angelov I., Desmaris V., Dynefors K., 2005

机译：关于AlGaN / GaN HEMT和SiC MESFET的大信号建模

AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT

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