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首页> 外文期刊>International Journal of Machine Tools & Manufacture: Design, research and application >A grinding-based manufacturing method for silicon wafers: generation mechanisms of central dimples on ground wafers
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A grinding-based manufacturing method for silicon wafers: generation mechanisms of central dimples on ground wafers

机译：基于研磨的硅晶片制造方法：研磨晶片上中心凹痕的产生机理

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摘要

Silicon wafers are the fundamental building blocks for most integrated circuits. The lapping-based manufacturing method currently used to manufacture the majority of silicon wafers will not be able to meet the ever-increasing demand for flatter wafers and lower prices. A grinding-based manufacturing method has been investigated experimentally to demonstrate its potential to manufacture flat silicon wafers at a lower cost. It has been demonstrated that the site flatness on the ground wafers (except for a few sites at the wafer center) could meet the stringent specifications for future silicon wafers. This paper, as a follow up, addresses one of the reasons for the poor flatness at the wafer center: central dimples on ground wafers. A finite element model is developed to illustrate the generation mechanisms of central dimples. Then, effects of influencing factors (including Young's modulus and Poisson's ratio of the grinding wheel segment, dimensions of the wheel segment, grinding force, and chuck shape) on the central dimple sizes are studied. Pilot experimental results will be presented to substantiate the predicted results from the finite element model. This provides practical guidance to eliminate or reduce central dimples on ground wafers.
机译：硅晶片是大多数集成电路的基本构建块。当前用于制造大多数硅晶片的基于研磨的制造方法将无法满足对扁平晶片和更低价格的不断增长的需求。实验研究了一种基于研磨的制造方法，以证明其以较低的成本制造扁平硅晶片的潜力。已经证明，磨碎的晶片上的位点平坦度（晶片中心处的几个位点除外）可以满足未来硅晶片的严格规范。本文作为后续工作，探讨了晶圆中心平坦度较差的原因之一：研磨晶圆上的中央凹痕。开发了一个有限元模型来说明中心酒窝的产生机理。然后，研究了影响因素（包括砂轮段的杨氏模量和泊松比，砂轮段的尺寸，磨削力和卡盘形状）对中心凹坑尺寸的影响。将提供试验性实验结果，以证实有限元模型的预测结果。这为消除或减少研磨晶圆上的中央凹痕提供了实用指南。

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