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首页> 外文期刊>International journal of nanoscience >Utilization of Anodized Aluminum Oxide Substrate for the Growth of ZnO Microcrystals on Polygonized Spirals
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Utilization of Anodized Aluminum Oxide Substrate for the Growth of ZnO Microcrystals on Polygonized Spirals

机译：利用阳极氧化铝基质在多角螺旋上生长ZnO微晶

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Anodized Aluminum Oxide (AAO) has been utilized as a substrate for the screw dislocation assisted growth of polygonize spirals (PS) of ZnO with diameter of the order of ～230 μm by Chemical Vapour Deposition (CVD) process. Stoichiometric ZnO microcrystals nucleated on the terraces and tops of these polygonized spirals. Stress inherent in the ZnO polygonized spiral morphology (～3.57 GPa) was deciphered from the values of the magnitude of shift in observed 2θ values of Glancing Incidence angle XRD (GIXRD) peaks from the standard values (JCPDS 36-1451) for hexagonal Zincite. The growth mechanism of these PS was explained albeit to a limited extent on the basis of the Burton, Cabrera and Frank (BCF) theory and its later modification, wherein data obtained from exsitu SEM measurements concomitant with numerical analysis was utilized to decipher values of the critical radius and supersaturation ratios. Nucleation of ZnO microcrystals on the PS was explained on the basis of the supersaturation ratio and the plausible values of diffusion lengths, existent on the summits of these PS. Retardation of the step rotation of the PS, due to elastic stress around the dislocation source and the Gibbs-Thomson effect, was explained on the basis of numerical coeffcient ω~0, the dimensionless frequency of spiral rotation. Role of stress in inhibition of ZnO nucleation on PS of smaller heights and with larger supersaturation ratio, has been discussed albeit qualitatively. The optical characteristics of a single ZnO microcrystal has been analyzed by room temperature CL measurements in the wavelength range 350nm to 650 nm, revealing a single high intensity peak at 382 nm corresponding to a excitonic bandgap of 3.25 eV.
机译：阳极氧化铝（AAO）已被用作化学气相沉积（CVD）工艺，以螺旋位错辅助生长直径约为〜230μm的ZnO多边形螺旋（PS）的基板。化学计量的ZnO微晶在这些多边形螺旋的台阶和顶部成核。 ZnO多边形螺旋形貌（〜3.57 GPa）中固有的应力从六边形锌矿的标准入射角XRD（GIXRD）峰的2θ观测值的位移值中解译出来。尽管根据伯顿（Burton），卡布雷拉（Cabrera）和弗兰克（Frank）（BCF）理论及其后来的改进在有限程度上解释了这些PS的生长机理，其中利用了与数值分析相伴的从SEM测量获得的数据来破译PS的值。临界半径和过饱和比。基于过饱和率和这些PS顶点上存在的扩散长度的合理值，对ZnO微晶在PS上的形核进行了解释。基于位错源周围的弹性应力和吉布斯-汤姆森效应，根据螺旋系数ω〜0（螺旋旋转的无量纲频率）解释了PS的阶跃旋转的延迟。尽管定性地讨论了应力在较小高度和过饱和比较大的PS上抑制ZnO成核的作用。通过在350nm至650nm波长范围内的室温CL测量分析了单个ZnO微晶的光学特性，发现在382nm处有一个高强度峰，对应于3.25 eV的激子带隙。

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