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首页> 外文期刊>International journal of nanoscience >Junctionless Tunnel Field Effect Transistor with Nonuniform Doping
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Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

机译：掺杂不均匀的无结隧道效应晶体管

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摘要

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher I_(ON)/I_(OFF) ratio, lower threshold voltage and subthreshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.
机译：本文通过在沟道中实施双面非均匀高斯掺杂，进一步增强了双栅无结隧道场效应晶体管（DG-JLTFET）的直流性能。该设备已针对不同的通道材料（例如Si）和各种III-V化合物（如砷化镓，砷化铝铟和锑化铝铟）进行了仿真。结果表明，与具有均匀掺杂沟道的JLTFET相比，高斯掺杂沟道无结隧道场效应晶体管具有更高的I_（ON）/ I_（OFF）比，更低的阈值电压和亚阈值斜率，并且还具有更好的短沟道性能。

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