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首页> 外文期刊>International journal of PIXE >NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING
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NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING

机译：Ga1-xInxNyAs1-y薄膜在离子束通道中移动的氮晶格位置

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摘要

We have investigated the nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga1-xInxNyAs1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14N(α,p)17O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 ? from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.
机译：我们已经通过离子束通道技术研究了MOVPE生长的Ga1-xInxNyAs1-y中x = 0.07和y = 0.025的氮晶格位置。在该系统中，Ga 1-x In x N y As 1-y膜的晶格常数等于Ga As晶格。因此，我们在GaAs衬底上显然不会生长出任何应变，高质量和非常厚的GaInNAs膜。薄膜的质量以及In和N的晶格位置通过通道Rutherford背散射光谱法和使用3.95 MeV He2 +束的核反应分析来表征。使用14N（α，p）17O吸热核反应测量膜中取代氮的分数。我们的结果表明，超过90％的In和N原子位于取代位点，但是N原子被〜0.2？轻微取代。从晶格位置。我们建议GaInNAs膜在N原子周围具有局部应变或点缺陷。

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