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Antiferromagnetic Spin Glass in Doped Ge near Insulator Metal Transition

机译：绝缘体金属过渡附近掺杂锗中的反铁磁自旋玻璃

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摘要

A low-temperature (3.100 K) electron spin resonance (ESR) study of the spin system of neutral As donors in Ge showed that on the insulator side of the insulator.metal transition the single-spin density exponentially disappears as T→ 0. Such spins are bound into pairs to give an antiferromagnetic (AF) phase. Upon increasing the temperature the AF phase is destroyed, the single-spin density and, as a result, the ESR absorption signal becomes stronger. The temperature dependences of the densities of the pairs and single spins are typical for a chaotic distribution of neutral donors. In this case, there is no Neel temperature. For a low degree of compensation, the crystal lattice of Ge with the AF phase is actually a nanostructured system characterized by anisotropic internal stresses that are the strongest along one of the [110] directions. These stresses give rise to the anisotropy of the g-factor which is responsible for experimentally observed splitting of the ESR line. The compensating impurities destroy the AF phase and reduce this splitting. Local stresses are present in this case, too, but now they appear because of the Coulomb interaction of oppositely charged impurities and have no preferred orientation.
机译：低温（3.100 K）电子中子自旋系统的电子自旋共振（ESR）研究显示，Ge的施主在绝缘子。金属过渡的绝缘子侧随着T→0的消失而呈指数消失。自旋成对结合以产生反铁磁（AF）相。温度升高时，AF相被破坏，单轴密度增加，结果，ESR吸收信号变强。对和单旋转的密度的温度依赖性对于中性供体的混沌分布是典型的。在这种情况下，没有尼尔温度。对于低补偿度，具有AF相的Ge晶格实际上是纳米结构系统，其特征是各向异性内应力沿[110]方向之一是最强的。这些应力导致g因子的各向异性，这是实验观察到的ESR线分裂的原因。补偿杂质会破坏AF相并减少这种分裂。在这种情况下也存在局部应力，但现在由于局部带相反电荷的库仑相互作用而出现，并且没有优选的取向。

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