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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Using Deioeized Water to Remove Polystyrene Latex Particles from Oxide Layer by Single-Wafer Spin Processing
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Using Deioeized Water to Remove Polystyrene Latex Particles from Oxide Layer by Single-Wafer Spin Processing

机译：使用去离子水通过单晶片旋转工艺从氧化物层去除聚苯乙烯胶乳颗粒

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摘要

Residual particles significantly degrade the performance of large-scale integrated circuits; hence, the methods and efficiencies of particle-removal technologies for semiconductor wafer-cleaning processes are continuously being improved. This paper reports a deionized water (DIW)-based approach that significantly improves the particle removal efficiency (PRE) of polystyrene latex (PSL) particles from oxide surfaces. PSL particles are generally very difficult to remove from silicon oxide surfaces using DIW alone. We previously attempted to improve the PSL removal rate with DIW by increasing the wafer rotation speed and the medium flow rate in single-wafer spin processing. However, the maximum PRE was below 50% (PSL, 500 nm spheres). This study reports on the improvement of the PRE to >98.0% by combining a DIW clean with a very low wafer rotation speed (10 rpm) and a very low DIW flow rate (200 ml/min). The spatial distribution of the PRE matches that of the calculated capillary numbers across the wafer. We propose that the low wafer rotation speed and DIW flow rate impact the capillary number, allowing the DIW to percolate between the PSL particles and the oxide surface. Particles uplifted by this process become suspended in or on top of the liquid layer covering the wafer, and are removed when the rotation speed of the wafer is increased during the final drying process.
机译：残留颗粒会大大降低大规模集成电路的性能。因此，用于半导体晶片清洁工艺的颗粒去除技术的方法和效率正在不断提高。本文报道了一种基于去离子水（DIW）的方法，该方法显着提高了聚苯乙烯胶乳（PSL）颗粒从氧化物表面的颗粒去除效率（PRE）。通常，仅使用DIW很难从氧化硅表面去除PSL颗粒。我们先前曾尝试通过增加晶片旋转速度和单晶片旋转处理中的介质流速来通过DIW改善PSL去除率。但是，最大PRE低于50％（PSL，500 nm球）。这项研究报告通过将DIW清洁剂与极低的晶圆旋转速度（10 rpm）和非常低的DIW流速（200 ml / min）相结合，将PRE的含量提高至> 98.0％。 PRE的空间分布与整个晶圆上计算出的毛细管数相匹配。我们建议低的晶片转速和DIW流速会影响毛细管数，从而使DIW渗入PSL颗粒和氧化物表面之间。通过该过程提起的颗粒变得悬浮在覆盖晶片的液体层之中或之上，并在最终干燥过程中增加晶片的旋转速度时被去除。

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