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Dielectric Properties of Al-Nb Amorphous Mixed Oxides

机译:Al-Nb非晶态混合氧化物的介电性能

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摘要

An impedance study of amorphous thin oxide films grown on sputtered Al-Nb alloys is presented. The characterization of the electronic properties of mixed amorphous oxide on the basis of the theory of amorphous semiconductor Schottky barrier has been carried out for anodic film on Al-92at.%Nb in a very detailed manner. The semiconductor to insulator transition of formed oxides as a function of the alloy composition at fixed final voltage has been supported by differential admittance study. A possible rationale for this transition has been suggested taking into account the changes of solid state properties, optical bandgap and electronic structure of the films, derived from the fitting of the differential admittance curves at different frequencies.
机译:提出了在溅射的Al-Nb合金上生长的非晶氧化物薄膜的阻抗研究。基于非晶半导体肖特基势垒的理论,已经非常详细地对Al-92at。%Nb上的阳极膜进行了混合非晶氧化物电子性能的表征。差分导纳研究已支持在固定的最终电压下,所形成的氧化物从半导体到绝缘体的过渡与合金成分的关系。已经提出了这种转变的可能原理,其中考虑了薄膜的固态特性,光学带隙和电子结构的变化,这些变化是由不同频率下的导纳曲线的拟合得出的。

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