Treatments of Deposited SiO_x Surfaces Enabling Low Temperature Direct Bonding

C. Rauer; H. Moriceau; F. Fournel

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Treatments of Deposited SiO_x Surfaces Enabling Low Temperature Direct Bonding

机译：低温直接键合沉积的SiO_x表面的处理

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The effect of several surface treatments such as chemical-mechanical polishing or plasma activation applied to deposited silicon oxide layer surfaces prior to direct bonding has been investigated. It is shown that these treatments have a direct impact on surface and near subsurface OH bond densities which greatly participate in bonding energy changes. Better understanding of mechanism is proposed even if some conditions still deserve more investigation.

机译：已经研究了在直接键合之前对沉积的氧化硅层表面进行化学机械抛光或等离子体活化等几种表面处理的效果。结果表明，这些处理对表面和近表面下的OH键密度具有直接影响，而OH键密度极大地参与了键能的变化。即使某些条件仍然值得进一步研究，也建议对机制有更好的了解。

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《ECS Journal of Solid State Science and Technology》 |2013年第9期|共4页
作者
C. Rauer; H. Moriceau; F. Fournel;
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正文语种 eng
中图分类电化学工业;
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1. Treatments of Deposited SiO_x Surfaces Enabling Low Temperature Direct Bonding [J] . C. Rauer, H. Moriceau, F. Fournel ECS Journal of Solid State Science and Technology . 2013,第9期

机译：低温直接键合沉积的SiO_x表面的处理
2. Excellent surface passivation of heavily doped p~+ silicon by low-temperature plasma-deposited SiO_x/SiN_y dielectric stacks with optimised antireflective performance for solar cell application [J] . Shubham Duttagupta, Fa-Jun Ma, Bram Hoex, Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2014,第Pta1期

机译：低温等离子体沉积SiO_x / SiN_y电介质叠层对重掺杂p〜+硅具有出色的表面钝化性能，并具有优化的抗反射性能，适用于太阳能电池应用
3. Influence of CO_2 addition on hydrogen and oxygen surface bonding onto nanostructured diamond thin film surfaces deposited at low substrate temperatures [J] . Kuntumalla Mohan Kumar, Fischer Miriam, Akhvlediani Rozalia, Thin Solid Films . 2019,第SEPa1期

机译：添加CO_2对在低基材温度下沉积的纳米结构金刚石薄膜表面上氢和氧表面键合的影响
4. Treatments of deposited SiO_x surfaces enabling low temperature direct bonding [C] . C. Rauer, H. Moriceau, F. Fournel, Semiconductor wafer bonding 12: science, technology, and applications . 2012

机译：处理沉积的SiO_x表面以实现低温直接粘合
5. Nano-Bonding of Silicon Oxides-based surfaces at Low Temperature: Bonding Interphase Modeling via Molecular Dynamics and Characterization of Bonding Surfaces Topography, Hydro-affinity and Free Energy [D] . Whaley, Shawn D. 2011

机译：低温下基于氧化硅的表面的纳米键合：通过分子动力学和键合表面形貌，亲和力和自由能表征的键合相模型
6. Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu [O] . Chien-Min Liu, Han-Wen Lin, Yi-Sa Huang, -1

机译：通过在纳米孪晶Cu的（111）表面上蠕变实现低温直接铜-铜键合
7. Transparent and electrically conductive GaSb/Si direct wafer bonding at low temperatures by argon-beam surface activation [O] . Predan F., Reinwand D., Klinger V., 2015

机译：低温下通过氩气束表面活化实现透明导电GaSb / Si晶圆直接键合

Treatments of Deposited SiO_x Surfaces Enabling Low Temperature Direct Bonding

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