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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO_3 Gate Dielectric Incorporation
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Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO_3 Gate Dielectric Incorporation

机译：具有LaAlO_3栅极电介质的低工作电压InGaZnO薄膜晶体管

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摘要

In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-K lanthanum aluminum oxide (LaAlO_3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (V_t) of 0.29 V, a good on-off-state drive current ratio (Ion/IQff) of 1.1 x 10~5, and field effect mobility (μ_(FE)) of 5.4 cm~2/V · sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-κ LaAlO_3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low V_t allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications.
机译：在本文中，我们报道了采用高K氧化铝氧化铝（LaAlO_3）作为栅极电介质的低工作电压铟镓锌氧化物（IGZO）薄膜晶体管（TFT）。同时实现了良好的TFT特性，包括98 mV / dec的小亚阈值摆幅（SS），0.29 V的低阈值电压（V_t），1.1 x的良好开关状态驱动电流比（Ion / IQff） 10〜5，场效应迁移率（μ_（FE））为5.4 cm〜2 / V·秒。这些良好的性能与高κLaAlO_3电介质提供的高栅极电容密度和较小的等效氧化物厚度（EOT）有关。此外，研究了IGZO沉积过程中氧分压对器件特性的影响。小的SS和低的V_t允许这些器件在低至1.5 V的工作电压下使用，这为将来的高速和低功耗应用展示了巨大的潜力。

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