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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Thermal Characteristics of InP-Al_2O_3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration
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Thermal Characteristics of InP-Al_2O_3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration

机译：用于光子器件集成的InP-Al_2O_3 / Si低温异质直接键合的热特性

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摘要

Thermal characteristics of InP-Al_2O_3 bonding for photonic integrated circuits application have been reported in this work. This paper firstly demonstrates low temperature heterogeneous direct bonding assisted by a thin layer of high-K dielectric material (Al_2O_3). The InP samples with epitaxial growth layer are bonded to a thin Al_2O_3 layer coated Si wafer at 250°C under a bonding pressure of 3 MPa for 10 hours in vacuum (~2.5 x 10~4 mbar) ambient. Focused ion beam (FIB) results show an excellent bonding interface and no voids are observed. Compared with samples using SiO_2 as the intermediate layer, the simulation results obtained by COMSOL show an outstanding advantage of thermal dissipation using Al_2O_3 as the intermediate layer. Thermal characterization is accomplished through a Kelvin structure gold (Au) lines on the Al_2O_3 and SiO_2 layer. Due to the excellent thermal conductivity performance of Al_2O_3, this high quality heterogeneous direct bonding has potential applications for enhancing the performance of Si photonic integrated devices.
机译：在这项工作中，已经报道了用于光子集成电路的InP-Al_2O_3键合的热特性。本文首先展示了由高K介电材料（Al_2O_3）薄层辅助的低温异质直接键合。将具有外延生长层的InP样品在真空（〜2.5 x 10〜4 mbar）的环境中，在250℃，3 MPa的粘合压力下，将其涂覆到薄Al_2O_3层的Si晶片上粘合10个小时。聚焦离子束（FIB）结果显示出出色的键合界面，没有观察到空隙。与以SiO_2为中间层的样品相比，COMSOL获得的仿真结果显示出以Al_2O_3作为中间层的散热优势。热表征通过Al_2O_3和SiO_2层上的Kelvin结构金（Au）线完成。由于Al_2O_3具有出色的导热性能，因此这种高质量的异质直接键合具有增强Si光子集成器件性能的潜在应用。

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