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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO_2 Film
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Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO_2 Film

机译：多步沉积退火HfO_2薄膜的物理，电学和可靠性特征

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摘要

The physical, electrical, and reliability characteristics of the HfO_2 gate dielectrics that were fabricated by a single-step and a multi-step deposition-annealing method are compared in this study. After annealing at 750℃, the single-step annealed HfO_2 film has transformed into the polycrystalline phase, whereas the multi-step annealed HfO_2 film is found to remain in a nanocrystalline phase. Additionally, the density and composition of the HfO_2 dielectric films are enhanced by multi-step deposition-annealing process. These changes result in an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO_2 film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO_2 gate dielectrics. In addition to static stress (DC) evaluation, the reliability characteristics of multi-step deposition-annealed HfO_2 dielectrics under unipolar and bipolar stresses were also examined. The dielectric breakdown failure time under bipolar stress is longer than those under the other two stress methods. Moreover, as the number of deposition-annealing steps increases, the lifetime enhancement is reduced. However, the failure time is still longer than that of the single-step annealed HfO_2 film.
机译：本研究比较了通过单步和多步沉积退火方法制造的HfO_2栅极电介质的物理，电学和可靠性特征。在750℃退火后，单步退火的HfO_2膜已转变为多晶相，而多步退火的HfO_2膜则保留在纳米晶相中。此外，通过多步沉积退火工艺可以提高HfO_2介电膜的密度和组成。这些变化导致了多步沉积退火HfO_2薄膜的电学特性，击穿电压和可靠性的改善，表明多步沉积退火方法是提高HfO_2热稳定性和可靠性的有前途的手段栅极电介质。除了评估静态应力（DC）之外，还检查了多步沉积退火HfO_2电介质在单极性和双极性应力下的可靠性特征。双极性应力下的介电击穿失效时间比其他两种应力方法下的要长。此外，随着沉积退火步骤的数量增加，寿命的增加降低。但是，失效时间仍比单步退火的HfO_2薄膜要长。

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