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Non-Aqueous Cleaning Challenges for Preventing Damage to Fragile Nano-Structures: A Review

机译:防止对脆弱的纳米结构造成损坏的非水清洁挑战:综述

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摘要

With semiconductor-device geometry shrinking and becoming more complex, highly diluted chemicals are used during aqueous silicon wafer cleaning. The use of physical cleaning aids such as megasonic agitation with dilute chemistry or high-pressure atomizing jet sprays to avoid reduction of particle removal efficiency is prone to cause structural damage to both fragile freestanding MEMS and high-aspect-ratio LSI structures. The surface tension of water can also cause pattern collapse of nano-stractures. In addition to this, ultra-pure water can cause several other problems resulting in the degradation of device characteristics. These problems make the development of novel damage free non-aqueous cleaning methods a high priority. In this paper, several water-caused problems to bring damage to silicon devices are discussed with some possible solutions and, as the ultimate solutions to overcome the shortcomings of water-based cleaning, various alternative damage-free non-aqueous cleaning techniques are overviewed and discussed, which include low pressure, elevated temperature HF vapor cleaning, cryogenic aerosol nitrogen cleaning, supercritical carbon dioxide cleaning, and pinpoint dry cleaning that employs lasers, nano-probes, or nano-tweezers. There will be more research challenges and opportunities in these environmentally-benign damage-free cleaning technologies in the near future.
机译:随着半导体器件几何尺寸的缩小和变得越来越复杂,在水性硅晶片清洗过程中会使用高度稀释的化学药品。为了避免降低颗粒去除效率,使用物理清洁助剂(例如采用稀有化学成分的超音速搅拌或高压雾化喷射喷雾)容易对脆弱的独立式MEMS和高纵横比LSI结构造成结构损坏。水的表面张力还会引起纳米结构的图案塌陷。除此之外,超纯水还会引起其他一些问题,从而导致器件特性下降。这些问题使得开发新型无损非水清洁方法成为当务之急。在本文中,讨论了一些水引起的对硅器件造成损坏的问题,并提出了一些可能的解决方案,作为克服水基清洁缺点的最终解决方案,概述了各种替代性的无损非水清洁技术,讨论的内容包括低压,高温HF蒸气清洁,低温气溶胶氮清洁,超临界二氧化碳清洁以及采用激光,纳米探针或纳米镊子的精确干洗。这些对环境无害的清洁技术将在不久的将来面临更多的研究挑战和机遇。

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