• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ECS Journal of Solid State Science and Technology >Improvement in Surface Grinding Damage in Silicon Wafers by Chemical Spin-Etching
【24h】

Improvement in Surface Grinding Damage in Silicon Wafers by Chemical Spin-Etching

机译：通过化学自旋蚀刻改善硅晶片的表面研磨损伤

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Understanding damage caused by mechanical grinding is required for wafer thinning processes, because such damage significantly affects device performance in large-scale integrated circuits. Herein, in-depth analysis of damage caused by mechanical grinding was conducted by measuring minority carrier lifetime and by the photoacoustic displacement (PAD) technique, which are highly sensitive and quantitative methods for measuring damage. Previous low-sensitivity damage measurements indicate that grinding damage is distributed within a 5-μm-thick surface layer. However, although a 10-μm-thick surface layer is removed by chemical spin etching (CSE), the minority carrier lifetime remains low. This result suggests that significant damage still exists in layers deeper than 10 μm. After etching a 200-μm-thick layer, PAD measurements show that displacement at the surface recovers to 20 pm, which is the level of undamaged silicon. While minority carrier lifetime gradually increases with increased etching, this lifetime remains low after removing a 100-μm-mick strain layer. The minority carrier lifetime reaches that of defect-free silicon after removing a 300-μm-thick layer. These results clearly indicate that deep damage (i.e., depth of 200 μm) is caused at the silicon surface by conventional mechanical grinding. Additionally, we conclude that the CSE process is useful for thinning silicon wafers without inducing damage or strain.
机译：晶圆减薄过程需要了解由机械研磨引起的损坏，因为这种损坏会严重影响大规模集成电路中的器件性能。在此，通过测量少数载流子寿命和光声位移（PAD）技术对由机械研磨引起的损伤进行了深入分析，这是用于测量损伤的高度灵敏和定量的方法。先前的低灵敏度损伤测量表明，研磨损伤分布在5μm厚的表层内。但是，尽管通过化学旋转蚀刻（CSE）去除了10μm厚的表面层，但少数载流子的寿命仍然很短。该结果表明，深度大于10μm的层中仍然存在明显的损坏。刻蚀厚度为200μm的层后，PAD测量表明表面的位移恢复到20 pm，这是未损坏的硅的水平。尽管少数载流子的寿命随着蚀刻的增加而逐渐增加，但在去除100μm的密克应变层后，该寿命仍然很低。去除300μm厚的层后，少数载流子寿命达到无缺陷硅的寿命。这些结果清楚地表明，通过常规的机械研磨在硅表面上引起了深层损伤（即200μm的深度）。此外，我们得出结论，CSE工艺可用于减薄硅晶片而不会引起损坏或应变。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号