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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Self-Limiting Growth and Thickness- and Temperature- Dependence of Optical Constants of ALD AlN Thin Films
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Self-Limiting Growth and Thickness- and Temperature- Dependence of Optical Constants of ALD AlN Thin Films

机译：ALD AlN薄膜的自限生长以及光学常数的厚度和温度依赖性

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摘要

We have investigated the growth characteristics and optical constants of thin AlN films made by thermal atomic layer deposition (ALD) from trimethylaluminum (TMA) and ammonia (NH_3). We observed the nucleation, closure and growth after closure of the films using atomic force microscopy and in-situ spectroscopic ellipsometry. A fully covered surface was obtained for films with a thickness of about 2 nm. The self-limiting ALD growth was observed at temperatures of 330 and 350℃ with deposition rates of 1.5 and 2.1 A/cycle, respectively. At 370℃, thermal decomposition of TMA dominated the growth mechanism, resulting in a fast and non-self-limiting deposition. Low concentrations of oxygen (0.8-2.5%) and carbon (5-7.5%) incorporated into the films were measured. We found that the refractive index increased remarkably with increasing film thickness and growth temperature.
机译：我们研究了通过热原子层沉积（ALD）由三甲基铝（TMA）和氨（NH_3）制成的AlN薄膜的生长特性和光学常数。我们使用原子力显微镜和原位光谱椭偏仪观察了薄膜闭合后的形核，闭合和生长。对于具有约2nm的厚度的膜，获得了完全覆盖的表面。在330和350℃的温度下观察到自限ALD生长，沉积速率分别为1.5和2.1 A /循环。在370℃，TMA的热分解作用决定了其生长机理，从而导致了快速且非限制性的沉积。测量了掺入薄膜中的低浓度氧气（0.8-2.5％）和碳（5-7.5％）。我们发现折射率随着膜厚度和生长温度的增加而显着增加。

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