Quantized double-layer charging of iron oxide nanoparticles on a-Si : H controlled by charged defects in a-Si : H

Weis M; Gmucova K; Nadazdy V; Capek I; Satka A; Kopani M; Cirak J; Majkova E

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Quantized double-layer charging of iron oxide nanoparticles on a-Si : H controlled by charged defects in a-Si : H

机译：由a-Si：H中的带电缺陷控制的氧化铁纳米粒子在a-Si：H上的定量双层充电

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Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film (a-Si:H) is reported. Quantized double-layer charging of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the excess of negative/positive charged defect states in the a-Si:H layer. The particular charge states in a-Si:H are created by the simultaneous application of a suitable bias voltage and illumination before the measurement.

机译：报道了包裹在油酸/油胺外壳中的氧化铁纳米粒子的单电子顺序充电，并通过Langmuir-Blodgett技术将其沉积到覆盖有未掺杂的氢化非晶硅膜（a-Si：H）的Pt电极上。通过循环伏安法检测纳米颗粒的量化双层充电，使其达到电流峰值，并且可以通过a-Si：H层中过多的负/正充电缺陷状态来开启/关闭充电效果。在测量之前，通过同时施加适当的偏置电压和照明来创建a-Si：H中的特定电荷状态。

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来源
《Electroanalysis》 |2007年第12期|共4页
作者
Weis M; Gmucova K; Nadazdy V; Capek I; Satka A; Kopani M; Cirak J; Majkova E;
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正文语种 eng
中图分类电化学、电解、磁化学;
关键词
quantized double-layer charging; nanoparticles; amorphous silicon; Langmuir-Blodgett layers; voltammetry; PROTECTED GOLD NANOPARTICLES; METAL NANOPARTICLES; SURFACE ENSEMBLES; QUANTUM-DOT; VOLTAMMETRY; DYNAMICS; CLUSTERS; HYDROGEN; STATES;

机译：定量双层电荷;纳米粒子;非晶硅;Langmuir-Blodgett层;伏安法;受保护的金纳米粒子;金属纳米粒子;表面包络;量子点;伏安;动力学;簇;氢;态;

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1. Quantized double-layer charging of iron oxide nanoparticles on a-Si : H controlled by charged defects in a-Si : H [J] . Weis M, Gmucova K, Nadazdy V, Electroanalysis . 2007,第12期

机译：由a-Si：H中的带电缺陷控制的氧化铁纳米粒子在a-Si：H上的定量双层充电
2. Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction [J] . Stefaan De Wolf, Christophe Ballif, Michio Kondo Physical review . 2012,第11期

机译：a-Si：H体缺陷的动力学和a-Si：H / c-Si界面态还原
3. Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x) [J] . Lucovsky G Philosophical magazine: structure and properties of condensed matter . 2009,第28a30期

机译：薄膜非晶态固体的内在键合缺陷：非晶硅（a-Si），氢化非晶硅（a-Si：H），非晶硒（a-Se）和非晶硒-砷合金（a-AsxSe1-x ）
4. Role of charged defects in the light-induced degradation of single junction a-Si:H solar cells [C] . Zeman, M., Nadazdy, . 2003

机译：带电缺陷在单结a-Si：H太阳能电池的光诱导降解中的作用
5. Factors controlling synthesis of iron oxide nanoparticles and the effect of surface charge on magnetic hyperthermia. [D] . Qi, Bin. 2013

机译：控制氧化铁纳米粒子合成的因素以及表面电荷对磁热疗的影响。
6. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks [O] . Yuren Xiang, Chunlan Zhou, Endong Jia, 2015

机译：a-Si：H（i）/ Al2O3表面钝化堆栈中原子层沉积的Al2O3膜的氧化前体依赖性
7. Charge collection in a-Si: H\/a-Si$_{1-x}$C$_{x}$ multilayers photodetectors [O] . Jing, T, Delgado, J C, Bertomeu, J, 1994

机译：a-Si中的电荷收集：H \ / a-Si $ _ {1-x} $ C $ _ {x} $多层光电探测器
8. Microscopic origins of metastable effects in a-Si:H and deep defect characterization in a-Si,Ge:H alloys. Final subcontract report, February 1, 1991--January 31, 1994 [R] . Cohen, J. D. 1994

机译：a-si：H中亚稳效应的微观起源和a-si，Ge：H合金中的深部缺陷表征。最终分包合同报告，1991年2月1日 - 1994年1月31日

Quantized double-layer charging of iron oxide nanoparticles on a-Si : H controlled by charged defects in a-Si : H

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