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About 20 years of silicon-based thin-film sensors with chalcogenide glass materials for heavy metal analysis: Technological aspects of fabrication and miniaturization

机译:具有硫属化物玻璃材料的硅基薄膜传感器用于重金属分析已有约20年的历史:制造和小型化的技术方面

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Chalcogenide glass materials as membranes for potentiometric sensors for chemical analysis in solutions, e.g., ion-selective electrodes, have been studied for more than three decades. Already in the 1970's, first papers dealt with the ion-sensing properties of chalcogenide glasses, followed by systematic investigations of their solid-state chemistry, the sensing mechanism and their analytical characteristics. Combining the analytical performance of chalcogenide glass membranes with techniques originally invented for semiconductor processing, a new generation of silicon-based thin-film sensors with chalcogenide glass materials for heavy metal detection has been created. In the beginning, co-sputtering of Cu and As2Se3 resulted in a Cu2+-selective field-effect sensor, while in recent years, a variety of chalcogenide glass materials have been stoichiometrically deposited onto ISFETs (ion-sensitive field-effect transistor), EIS (electrolyte-insulator-semiconductor), LAPS (light-addressable potentiometric sensor) and RISE structures, respectively, serving as miniaturized chemical sensors. The present review paper is devoted to research and development in the field of silicon-based thin-film sensors with chalcogenide glass materials and emphasizes technological aspects of fabrication and miniaturization within the last 20 years.
机译:硫属化物玻璃材料作为电位计传感器的膜,用于溶液中的化学分析,例如离子选择电极,已经研究了三十多年。早在1970年代,第一篇论文就研究了硫族化物玻璃的离子传感特性,随后对其固态化学,传感机理及其分析特性进行了系统研究。将硫族化物玻璃膜的分析性能与最初为半导体加工而发明的技术相结合,已创建了新一代的具有硫属化物玻璃材料的硅基薄膜传感器,用于重金属检测。最初,Cu和As2Se3的共溅射产生了Cu2 +选择性场效应传感器,而近年来,已将各种硫族化物玻璃材料化学计量沉积在ISFET(离子敏感场效应晶体管),EIS上(电解质-绝缘体-半导体),LAPS(光寻址电位传感器)和RISE结构分别用作微型化的化学传感器。本文将重点研究含硫族化物玻璃材料的硅基薄膜传感器领域的研究和发展,并重点介绍过去20年中制造和小型化的技术方面。

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