Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement

Wu WC; Chao TS; Chiu TH; Wang JC; Lai CS; Ma MW; Lo WC

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Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement

机译：脉冲IV测量下具有HfO2栅极电介质的接触蚀刻停止层应变nMOSFET的性能和界面表征

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In this paper, high-performance contact etching stop layer (CESL)-strained n-metal-oxide-semiconductor field effect transistor (nMOSFET) with HfO2 gate dielectrics has been successfully demonstrated. The effects of the CESL layer to the high-k without trapping behaviors are investigated by the pulse current-voltage (IV) technique for the first time. It is found that a roughly 55 and 60% increase of mobility and I-ON, respectively, can be achieved for the 300 nm CESL HfO2 nMOSFET using pulsed-IV measurement. Furthermore, a superior HfO2/Si interface for CESL devices is observed, demonstrated by an obvious interface state density reduction (6 x 10(11)-9 x 10(10) cm(-2)).

机译：本文成功地证明了具有HfO2栅极电介质的高性能接触蚀刻停止层（CESL）应变的n-金属氧化物半导体场效应晶体管（nMOSFET）。首次通过脉冲电流-电压（IV）技术研究了CESL层对高k值的无俘获行为的影响。结果发现，使用脉冲IV测量，对于300 nm CESL HfO2 nMOSFET，可以分别将迁移率和I-ON分别提高约55％和60％。此外，观察到了用于CESL器件的优异的HfO2 / Si界面，这通过明显的界面态密度降低（6 x 10（11）-9 x 10（10）cm（-2））得以证明。

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来源
《Electrochemical and solid-state letters》 |2008年第8期|共3页
作者
Wu WC; Chao TS; Chiu TH; Wang JC; Lai CS; Ma MW; Lo WC;
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正文语种 eng
中图分类电化学、电解、磁化学;
关键词
high-performance; CESL; pulsed-IV measurement;

机译：高性能;CESL;脉冲IV测量;

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专利

1. Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement [J] . Wu WC, Chao TS, Chiu TH, Electrochemical and solid-state letters . 2008,第8期

机译：脉冲IV测量下具有HfO2栅极电介质的接触蚀刻停止层应变nMOSFET的性能和界面表征
2. Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric [J] . Yeo CC, Cho BJ, Lee MH, Semiconductor science and technology . 2006,第5期

机译：具有HfO2栅介质的Si盖/超晶格Ge / Si和应变Si / Si1-xGex / Si nMOSFET的热稳定性研究
3. Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric [J] . Xu Jingping, Wen Ming, Zhao Xinyuan, Nanotechnology . 2018,第34期

机译：HFO2封装对少数层MOS2晶体管电气性能的影响，用ALD HFO2作为背栅电介质
4. Performance Enhancement for Strained HfO{sub}2 nMOSFET with Contact Etch Stop Layer (CESL) under Pulsed-IV Measurement [C] . Woei-Cherng Wu, Tien-Sheng Chao, Te-Hsin Chiu, IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：在脉冲 - IV测量下，具有触点蚀刻停止层（CESL）的紧张HFO {Sub} 2 NMOSFET的性能增强
5. Towards High Performance Two Dimensional Transistors: Doping, Contacts, and Gate Dielectric [D] . Yang, Lingming. 2017

机译：迈向高性能二维晶体管：掺杂，接触和栅极电介质
6. Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack [O] . Yung-Yu Chen 2014

机译：氟化HfO2 / SiON栅堆叠的单轴应变nMOSFET的电学特性
7. Improved performance of bottom-contact organic thin-film transistor using Al doped HfO2 gate dielectric [O] . Tang WM, Aboudi U, Provine J, 2014

机译：使用Al掺杂的HfO2栅极电介质改善底部接触有机薄膜晶体管的性能

Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement

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