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首页> 外文期刊>European Journal of Glass Science and Technology, PartB. Physics and Chemistry of Glasses >Positron annihilation lifetime spectroscopy as experimental probe of free volume concepts in network glasses
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Positron annihilation lifetime spectroscopy as experimental probe of free volume concepts in network glasses

机译：正电子an没寿命光谱作为网络眼镜中自由体积概念的实验探针

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摘要

Positron annihilation lifetime spectroscopy (PALS) is tested for use as an alternative experimental probe of free volume concepts in network chalcogenide glasses. PALS measurements are carried out within binary As-Se and ternary Ge-As(Sb)-S systems on the examples of g-As_2Se_3 and samples from stoichiometric As(Sb)_2S_3-GeS_2 and nonstoichiometric As(Sb)_2S_3-Ge_2S_3 cross sections. The effect of high energy gamma-irradiation on PALS parameters is studied for ternary glass compositions. The role of induced defect related positron traps in annihilation processes is illustrated. The correlations between nanovoid sizes obtained from PALS, Monte Carlo simulation and first sharp diffraction peak (FSDP) measurements in the framework of Elliott's model are established on the example of g-As_2Se_3,In order to study the nanovoid topology in the real glass structure. It is shown that nanovoids with average radius of 2.9 A, being effective traps for positrons with 0.37 ns defect related lifetime, are also detected within nanovoid distribution data obtained from Monte Carlo simulation. Suggesting that this group of nanovoids is responsible for the void based origin of FSDP, the analytical relationship between FSDP position and nanovoid diameter is proposed for layer like As_2X_5-type structures.
机译：经过测试，正电子lifetime没寿命谱（PALS）可用作网络硫族化物玻璃中自由体积概念的替代实验探针。在g-As_2Se_3的例子以及化学计量的As（Sb）_2S_3-GeS_2和非化学计量的As（Sb）_2S_3-Ge_2S_3横截面的样品上，在二元As-Se和三元Ge-As（Sb）-S系统中进行PALS测量。研究了三元玻璃成分的高能伽马辐射对PALS参数的影响。说明了与缺陷相关的正电子陷阱在an没过程中的作用。以g-As_2Se_3为例，建立了通过PALS，蒙特卡罗模拟和埃利奥特模型框架下的第一尖锐衍射峰（FSDP）测量得到的纳米空隙尺寸之间的相关性，以研究实际玻璃结构中的纳米空隙拓扑。结果表明，在从蒙特卡洛模拟获得的纳米空隙分布数据中，平均半径为2.9 A的纳米空隙，也就是与缺陷相关寿命为0.37 ns的正电子的有效陷阱。暗示这组纳米空隙是FSDP基于空隙的起源的原因，针对As_2X_5型结构层，提出了FSDP位置与纳米空隙直径之间的解析关系。

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