Ovshinsky Award: Why chalclgenides are ideal materials for Ovshinsky's Ovonic threshold and memory devices

H. Fritzsche

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Ovshinsky Award: Why chalclgenides are ideal materials for Ovshinsky's Ovonic threshold and memory devices

机译：Ovshinsky奖：为什么硫属元素化物是Ovshinsky Ovonic门限和存储设备的理想材料

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A theory of electronic switching of Ovonic threshold switches and memory devices is presented, and the highly conducting ON state is explained, which allows many billion reproducible switching cycles. These features are related to the defect chemistry and the unique properties of chalcogenide glasses. Some of Ovshinsky's new Ovonic Universal Memory devices are described, which are capable of non-binary information storage and encryption, and of neurosynaptic functions.

机译：提出了Ovonic阈值开关和存储设备的电子开关原理，并说明了高导通状态，这允许数十亿次可重复的开关周期。这些特征与硫族化物玻璃的缺陷化学和独特性能有关。描述了一些Ovshinsky的新型Ovonic通用存储设备，这些设备能够进行非二进制信息存储和加密，并具有神经突触功能。

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《European Journal of Glass Science and Technology, PartB. Physics and Chemistry of Glasses》 |2006年第2期|共6页
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H. Fritzsche;
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1. Ovshinsky Award: Why chalclgenides are ideal materials for Ovshinsky's Ovonic threshold and memory devices [J] . H. Fritzsche European Journal of Glass Science and Technology, PartB. Physics and Chemistry of Glasses . 2006,第2期

机译：Ovshinsky奖：为什么硫属元素化物是Ovshinsky Ovonic门限和存储设备的理想材料
2. Field dependent conductivity and threshold switching in amorphous chalcogenides-Modeling and simulations of ovonic threshold switches and phase change memory devices [J] . Jake Scoggin, Helena Silva, Ali Gokirmak Journal of Applied Physics . 2020,第23期

机译：非晶硫芥子生成剂的野外依赖电导率和阈值切换 - 卵形阈值开关和相变存储器件的模拟
3. Progress in understanding the Ovshinsky Effect: Threshold switching in chalcogenide amorphous semiconductors (Review) [J] . Hudgens S. Physica status solidi, B. Basic research . 2012,第10期

机译：理解Ovshinsky效应的进展：硫族化物非晶半导体中的阈值转换（综述）
4. Ovonic materials for memory nano-devices: Stability of I(V) measurements [C] . Rudan Massimo, Piccinini Enrico, Buscemi Fabrizio, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon . 2015

机译：用于存储器纳米器件的Ovonic材料：I（V）测量的稳定性
5. Threshold voltage instability on nitride based localized charge trap non-volatile memory devices. [D] . Chuan, Lee Meng. 2015

机译：基于氮化物的局部电荷陷阱非易失性存储器件的阈值电压不稳定性。
6. Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters [O] . Yunmo Koo, Hyunsang Hwang -1

机译：Zn1-xTex输卵管阈值转换设备性能及其与材料参数的关系
7. Ovonic materials for memory nano-devices: Stability of I(V) measurements [O] . Massimo Rudan, Enrico Piccinini, Fabrizio Buscemi, 2015

机译：用于记忆纳米器件的Ovonic材料：I（V）测量的稳定性
8. Transition Metal Oxides, Amorphous Semiconductors, Semiconducting Glasses, Ovshinsky Effect, and Other Switching (Memory) Materials--A Literature Review [R] . Mikek, J. T. 1970

机译：过渡金属氧化物，非晶半导体，半导体玻璃，Ovshinsky效应和其他开关（存储）材料 - 文献综述

Ovshinsky Award: Why chalclgenides are ideal materials for Ovshinsky's Ovonic threshold and memory devices

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