Study of High-kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission   Spectroscopy

Yamashita Koji; Numajiri Yuuya; Watanabe MasatoKakushima KuniyukiIwai HiroshiNohira Hiroshi

首页> 外文期刊>Japanese journal of applied physics >Study of High-kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy

【24h】

Study of High-kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy

机译：

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have investigated the effect of La2O3 interlayer insertion on the thermal stability of a high-kappa/In0.53Ga0.47As interface and the chemical bonding states at the high-kappa/In0.53Ga0.47As interface by hard X-ray (h nu = 7.94 keV) photoemission spectroscopy (HX-PES). The control of the oxide formation at the HfO2/In0.53Ga0.47As interface was tried by inserting La2O3, which has a large Gibbs free energy. Analyses of As 2p, Ga 2p, In 3d, Hf 3d, La 3d, and W 4f spectra show that the oxidation of In0.53Ga0.47As was suppressed by La2O3 interlayer insertion. We have also investigated the effect of surface treatment on the chemical bonding state of the In0.53Ga0.47As surface. (NH4)(2)S treatment can suppress the oxidation of the In0.53Ga0.47As surface. (C) 2011 The Japan Society of Applied Physics

著录项

来源
《Japanese journal of applied physics》 |2011年第10issue2期|10PD02.1-10PD02.5|共5页
作者
Yamashita Koji; Numajiri Yuuya; Watanabe MasatoKakushima KuniyukiIwai HiroshiNohira Hiroshi;
展开▼
作者单位

Tokyo City Univ, Setagaya Ku, Tokyo 1588557, Japan.;

Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan.;

Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan.;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Effect of Oxygen Hole in Li2MnO3 Revealed by Hard X-ray Photoemission Spectroscopy and Band Structure Calculations [J] . Morita Keisuke, Itoda Mitoki, Hosono EijiAsakura DaisukeOkubo MasashiTakagi YasumasaYasui AkiraSaini Naurang L.Mizokawa Takashi Journal of the Physical Society of Japan . 2023,第1期

机译：Effect of Oxygen Hole in Li2MnO3 Revealed by Hard X-ray Photoemission Spectroscopy and Band Structure Calculations
2. (054506)Analytical System for Simultaneous Operando Measurements of Electrochemical Reaction Rate and Hard X-ray Photoemission Spectroscopy [J] . Kohei Suda, Teppei Kawamoto, Satoshi Yasuno Journal of the Electrochemical Society . 2021,第5期

机译：(054506)Analytical System for Simultaneous Operando Measurements of Electrochemical Reaction Rate and Hard X-ray Photoemission Spectroscopy
3. SiO_(2)-TiO_(2) interfaces studied by ellipsometry and x-ray photoemission spectroscopy [J] . B. Gallas, A. Brunet-Bruneau, S. FissonG. VuyeJ. Rivory Journal of Applied Physics . 2002,第4期

机译：SiO_(2)-TiO_(2) interfaces studied by ellipsometry and x-ray photoemission spectroscopy
4. 利用掃描穿隧顯微鏡探討在硒化銦上未氧化表面和氧化表面之介面接合處的電子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction [D] . Luo, Zih-Jia. 2018

机译：利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
5. Surface photochemistry probed by two-photon photoemission spectroscopy [O] . Zhou, Chuanyao, Ma, Zhibo, Ren, Zefeng, 2012

机译：surface photochemistry probed by two-photon photoemission spectroscopy
6. Studies of ferroelectric heterostructure thin films and interfaces via in situ211 analytical techniques [R] . Auciello, O., Dhote, A., Gao, Y., 1999

机译：studies of ferroelectric heterostructure thin films and interfaces via in situ211 analytical techniques

Study of High-kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy

摘要

著录项

相似文献

相关主题

期刊订阅