Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling

Drozdov M.N.; Vostokov N.V.; DanilTsev V.M.; Demidov E.V.; Drozdov Y.N.; Khrykin O.I.; Shashkin V.I.

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Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling

机译：借助SIMS和C-V分布图定量分析具有二维电子通道的AlGaN / GaN异质结构中的元素组成和电子浓度

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The elementary composition and electron concentration in series of delta doped heterostructures Al _X Ga _(1 - X) N/GaN with a two-dimensional electron channel are investigated. Separation of the electron channel and the doping Si admixture is shown by a combination of SIMS and C-V profiling.

机译：研究了具有二维电子通道的一系列δ掺杂异质结构Al _X Ga _（1- X）N / GaN的元素组成和电子浓度。 SIMS和C-V分析的结合显示了电子通道和Si掺杂混合物的分离。

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《Bulletin of the Russian Academy of Sciences. Physics》 |2012年第2期|共4页
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Drozdov M.N.; Vostokov N.V.; DanilTsev V.M.; Demidov E.V.; Drozdov Y.N.; Khrykin O.I.; Shashkin V.I.;
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正文语种 eng
中图分类物理学;
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1. Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling [J] . Drozdov M.N., Vostokov N.V., DanilTsev V.M., Bulletin of the Russian Academy of Sciences. Physics . 2012,第2期

机译：借助SIMS和C-V分布图定量分析具有二维电子通道的AlGaN / GaN异质结构中的元素组成和电子浓度
2. Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures [J] . Zhaojun Lin, Wu Lu Journal of Applied Physics . 2006,第1期

机译：Ni肖特基接触面积对应变AlGaN / GaN异质结构二维电子气薄载流子浓度的影响
3. The Influence of Composition and Unintentional Doping on the Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructures [J] . S.K.Davidsson, M.Gurusinghe, T.G.Andersson, Journal of Electronic Materials . 2004,第5期

机译：成分和无意掺杂对AlGaN / GaN异质结构中二维电子气密度的影响
4. Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors with high Al compositions [C] . N Maeda, K Tsubaki, T Saitoh, International symposium on compound semiconductor . 2002

机译：AlGaN / GaN异质结构场效应晶体管中的二维电子气体输送性能具有高Al组合物
5. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors [D] . Mukherjee, Shrijit 2017

机译：AlGaN / GaN高电子迁移率晶体管的动态性能仿真
6. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy [O] . Tian Li Duan, Ji Sheng Pan, Ning Wang, 2017

机译：角分辨X射线光电子能谱研究Al2O3封端的GaN / AlGaN / GaN异质结构的表面极化
7. Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures [O] . Martínez Criado Gema, Cros Stotter Ana, Cantarero Sáez Andrés, 2001

机译：残余应变对AlGaN / GaN异质结构二维电子气浓度的影响

Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling

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