Structural Perfection and the Distribution of Impurities in Magnetic Semiconductor Nanoheterosystems Based on GaAs

A. I. Bobrov; O. V. Vikhrova; Yu. A. Danilov; M. V. Dorokhin; Yu. N. Drozdov; M. N. Drozdov; B. N. Zvonkov; N. V. Malekhonova; E. D. Pavlova

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Structural Perfection and the Distribution of Impurities in Magnetic Semiconductor Nanoheterosystems Based on GaAs

机译：基于GaAs的磁半导体纳米异质系统的结构完善和杂质分布

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A comprehensive study of the crystal structure and distribution of impurities in GaAs nanoheterosystems containing InGaAs quantum wells and delta 〈Mn〉-doped layers is performed. High-resolution transmission electron microscopy, energy dispersive spectroscopy, and X-ray diffraction are used in particular. It is shown that our technique allows growing structures with embedded delta layers of magnetic impurities epitaxially.

机译：对含InGaAs量子阱和δ〈Mn〉掺杂层的GaAs纳米异质体系中的晶体结构和杂质分布进行了综合研究。特别地，使用高分辨率的透射电子显微镜，能量分散光谱和X射线衍射。结果表明，我们的技术允许外延生长具有磁性杂质嵌入δ层的结构。

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《Bulletin of the Russian Academy of Sciences. Physics》 |2014年第1期|共3页
作者
A. I. Bobrov; O. V. Vikhrova; Yu. A. Danilov; M. V. Dorokhin; Yu. N. Drozdov; M. N. Drozdov; B. N. Zvonkov; N. V. Malekhonova; E. D. Pavlova;
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正文语种 eng
中图分类物理学;
关键词
Perfection; Distribution; Impurities;

机译：完善;分配;杂质;

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专利

1. Structural Perfection and the Distribution of Impurities in Magnetic Semiconductor Nanoheterosystems Based on GaAs [J] . A. I. Bobrov, O. V. Vikhrova, Yu. A. Danilov, Bulletin of the Russian Academy of Sciences. Physics . 2014,第1期

机译：基于GaAs的磁半导体纳米异质系统的结构完善和杂质分布
2. Electronic states and spatial charge distribution of single Mn impurity in diluted magnetic semiconductors [J] . Wang WH, Zou LJ Chinese physics letters . 2006,第6期

机译：稀磁半导体中单锰杂质的电子态和空间电荷分布
3. Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors [J] . WANG Wei-Hua, ZOU Liang-Jian 中国物理快报：英文版 . 2006,第006期

机译：稀磁半导体中单锰杂质的电子态和空间电荷分布
4. Zinc Oxide Based Diluted Magnetic Semiconductor Nanoparticles: Synthesis by Laser Ablation in Liquids, Microstructural and Optical Properties [C] . Andriy I. Savchuk, Alessio Perrone, Ihor D. Stolyarchuk, ICPS 2012 . 2013

机译：氧化锌基稀磁半导体纳米颗粒：通过激光烧蚀在液体中的合成，微观结构和光学性质
5. Internal Stark Effect Caused by Inhomogeneous Distribution of Ionized Impurities in Highly Compensated Semiconductors [D] . Harada, Yoshiyuki 1995

机译：高补偿半导体中离子杂质的不均匀分布引起的内部斯塔克效应
6. The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y/GaAs quantum well [O] . Unal Yesilgul, Fatih Ungan, Serpil Şakiroğlu, 2012

机译：磁场对Ga1-xInxNyAs1-y / GaAs量子阱中浅施主杂质的杂质结合能的影响
7. Local environment surrounding magnetic impurity atoms in a structural phase transition of Co-doped TiO2 nanocrystal ferromagnetic semiconductors [O] . Soo Y.L. 2011

机译：Co掺杂TiO2纳米晶铁磁半导体结构相变中磁性杂质原子周围的局域环境
8. Impurity and Defect Characterization in Epitaxial GaAs, InP, and the Ternary and Quaternary Compound Semiconductors [R] . Button, K. J., Afsar, M. N. 1984

机译：外延Gaas，Inp以及三元和四元化合物半导体的杂质和缺陷表征

Structural Perfection and the Distribution of Impurities in Magnetic Semiconductor Nanoheterosystems Based on GaAs

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