Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions

Hall J.; Bexell U.; Fletcher J. S.; Canovic S.; Malmberg P.

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Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions

机译：使用ToF-SIMS以Ga-69（+），Bi-3（+）/ Cs +和C-60（+）/ C-60（2+）为主要成分并进行溅射的SOF互连材料上的氧化皮深度分布比较离子

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Oxide scale cross-sections of CeO2 coated FeCr based solid oxide fuel cell interconnect materials were examined using secondary ion mass spectrometry (SIMS) depth profiling. A duplex spinel : chromia scale was formed after 1 h at 850 degrees C. Ti and ceria were observed between these layers. Additionally, minor concentrations of Mn, Si and Nb were observed at the oxide/ metal interface. Furthermore, Al and Ti were concentrated primarily in the metal surface close to the oxide/metal interface. Secondary ion mass spectrometry sputter depth profiles using different ion sources; Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C(60)(2+)were compared with TEM oxide scale cross-section and field emission gun-Auger electron spectroscopy depth profiling. Secondary ion mass spectrometry depth profiling with Ga-69(+), Bi(3)z/Cs+ showed decreased secondary ion yields in the metallic matrix. This decrease could be avoided using oxygen flooding. The C-60 cluster ion depth profiles were less sensitive to type of matrix and gave the best correspondence to the TEM cross-section. However, the impact energy has to be high enough to avoid carbon deposition.

机译：使用二次离子质谱（SIMS）深度剖析检查了CeO2涂层的FeCr基固体氧化物燃料电池互连材料的氧化鳞截面。 1 h后在850摄氏度下形成双相尖晶石：氧化铬鳞片。在这些层之间观察到Ti和二氧化铈。另外，在氧化物/金属界面处观察到少量的Mn，Si和Nb。此外，Al和Ti主要集中在靠近氧化物/金属界面的金属表面。使用不同离子源的二次离子质谱仪溅射深度分布;将Ga-69（+），Bi-3（+）/ Cs +和C-60（+）/ C（60）（2+）与TEM氧化物鳞片和场发射电子枪-俄歇电子能谱深度分布图进行了比较。用Ga-69（+），Bi（3）z / Cs +进行的二次离子质谱深度分析表明，金属基质中的二次离子产率降低。使用氧气驱可以避免这种减少。 C-60簇离子深度分布图对基质类型较不敏感，并且与TEM截面的对应关系最佳。然而，冲击能量必须足够高以避免碳沉积。

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《Materials at High Temperatures》 |2015年第2期|共9页
作者
Hall J.; Bexell U.; Fletcher J. S.; Canovic S.; Malmberg P.;
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正文语种 eng
中图分类工程材料学;
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Secondary ion mass spectrometry; Oxide scale; Depth profiling; Solid oxide fuel cell;

机译：二次离子质谱法氧化皮深度分布固体氧化物燃料电池;

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1. Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions [J] . Hall J., Bexell U., Fletcher J. S., Materials at High Temperatures . 2015,第1a2期

机译：使用ToF-SIMS以Ga-69（+），Bi-3（+）/ Cs +和C-60（+）/ C-60（2+）为主要成分并进行溅射的SOF互连材料上的氧化皮深度分布比较离子
2. Quantitative reconstruction of Ta/Si multilayer depth profiles obtained by Time-of-Flight-Secondary-Ion-Mass-Spectrometry (ToF-SIMS) using Cs+ ion sputtering [J] . Liu Y., Hofmann S., Wang J. Y., Thin Solid Films . 2015,第SEPa30PTaA期

机译：使用Cs +离子溅射通过飞行时间二次离子质谱法（ToF-SIMS）获得的Ta / Si多层深度分布的定量重建
3. Depth profiling of peptide films with TOF-SIMS and a C-60 probe [J] . Cheng J, Winograd N Analytical chemistry . 2005,第11期

机译：使用TOF-SIMS和C-60探针对肽膜进行深度分析
4. ToF-SIMS Depth Profiling of Cells: Z-correction 3D Imaging and Sputter Rate of Individual NIH/3T3 Fibroblasts [O] . Michael A. Robinson, Daniel J. Graham, David G. Castner -1

机译：TOF-sIms细胞深度剖面：Z-校正三维成像和个人NIH / 3T3成纤维细胞的溅射速率
5. ToF-SIMS depth profiling of a complex polymeric coating employing a C-60 sputter source [O] . Hinder, SJ, Lowe, C, Watts, JF 2007

机译：使用C-60溅射源的复杂聚合物涂层的ToF-SIMS深度剖析

Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions

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