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Nucleation mechanism for epitaxial growth of aluminum films on sapphire substrates by molecular beam epitaxy

机译:分子束外延在蓝宝石衬底上外延生长铝膜的成核机理

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摘要

Aluminum (Al) epitaxial films with various thicknesses are grown on sapphire substrates by molecular beam epitaxy (MBE). The nucleation evolution of surface morphology and structural property during the growth of Al epitaxial films on sapphire substrates are investigated in detail. It is found that the 10 nm-thick Al epitaxial films grown on the sapphire substrates show the full-width at half-maximum (FWHM) for Al(111) of 0.35 degrees and the root-mean square (RMS) surface roughness of 2.4 nm. When the thickness increases, the surface initially starts to roughen and then becomes smoother. At the same time, the crystal quality of the Al epitaxial films becomes better thanks to the annihilation of dislocations. As the thickness of Al epitaxial films reaches 800 nm, the FWHM for AI(111) is 0.04 and the RMS surface roughness is 0.14 nm, indicating the high crystal quality and flat surface morphology of Al epitaxial films. The corresponding nucleation mechanism of Al epitaxial films grown on sapphire substrates is hence proposed. This work is of great significance for the fabrication of Al-based devices. (C) 2016 Elsevier Ltd. All rights reserved.
机译:通过分子束外延(MBE)在蓝宝石衬底上生长各种厚度的铝(Al)外延膜。详细研究了蓝宝石衬底上Al外延膜生长过程中表面形貌和结构性能的形核演化。发现在蓝宝石衬底上生长的10 nm厚的Al外延膜显示Al(111)的半最大全宽(FWHM)为0.35度,均方根(RMS)表面粗糙度为2.4纳米当厚度增加时,表面最初开始变粗糙,然后变得更光滑。同时,由于位错的an灭,Al外延膜的晶体质量变得更好。当Al外延膜的厚度达到800 nm时,Al(111)的FWHM为0.04,RMS表面粗糙度为0.14 nm,表明Al外延膜具有较高的晶体质量和平坦的表面形貌。因此提出了在蓝宝石衬底上生长的Al外延膜的相应成核机理。这项工作对铝基器件的制造具有重要意义。 (C)2016 Elsevier Ltd.保留所有权利。

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